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Details, datasheet, quote on part number:P6SMB56A
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Datasheet text preview:
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
Cathode Band
DO-214AA (SMB J-Bend)
0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30)
0.180 (4.57) 0.160 (4.06)
ded ge xten Ran Ee ltag Vo
0.083 MIN (2.10 MIN) 0.050 MIN (1.27 MIN)
V(BR) Unidirectional 6.8 to 540V V(BR) Bidirectional 6.8 to 220V Peak Pulse Power 600W
Mounting Pad Layout
0.106 MAX (2.69 MAX)
0.012 (0.305) 0.006 (0.152)
0.096 (2.44) 0.084 (2.13)
Dimensions in inches and (millimeters)
0.008 (0.203) Max.
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.220 REF
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026. High temperature soldering guaranteed: 250°C/10 seconds at terminals. Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.003 oz., 0.093 g Packaging Codes Options (Antistatic): 51 2K per Bulk box, 20K/carton 52 750 per 7" plastic Reel (12mm tape), 15K/carton 5B 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low profile package with built-in strain relief for surface mounted applications · Glass passivated junction · Low incremental surge resistance · 600W peak pulse power capability with a 10/1000µs waveform, repetition rate (duty cycle): 0.01% · Excellent clamping capability · Very fast response time
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Peak power dissipation with a 10/1000µs waveform Peak pulse current with a 10/1000µs waveform
(1)(2)
Symbol
(Fig. 1)
Value Minimum 600 See Next Table 5.0 100 65 to +150 100 20 65 to +150
Unit W A W A °C °C/W °C/W °C
PPPM IPPM PM(AV) IFSM TJ, TSTG RJA RJL TJ, TSTG
(1)
Power dissipation on infinite heatsink, TA = 50°C Peak forward surge current 8.3ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range Thermal resistance junction to ambient air Thermal resistance junction to leads Operating junction and storage temperature range
(3)
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout
Document Number 88370 13-Nov-02
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P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. V
General Semiconductor Part Number P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB11A P6SMB12A P6SMB13A P6SMB15A P6SMB16A P6SMB18A P6SMB20A P6SMB22A P6SMB24A P6SMB27A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB43A P6SMB47A P6SMB51A P6SMB56A P6SMB62A P6SMB68A P6SMB75A P6SMB82A P6SMB91A P6SMB100A P6SMB110A P6SMB120A P6SMB130A P6SMB150A P6SMB160A P6SMB170A P6SMB180A P6SMB200A P6SMB220A P6SMB250A P6SMB300A P6SMB350A P6SMB400A P6SMB440A P6SMB480A P6SMB510A P6SMB540A
Notes: (1) (2) (3) (4)
F
= 3.5V at IF = 50A (uni-directional only)
Device Marking Code UNI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A BI 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C -- -- -- -- -- -- -- --
Breakdown Voltage V(BR) at IT (1) (V) Min 6.45 7.13 7.79 8.65 9.50 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 105 114 124 143 152 162 171 190 209 237 285 333 380 418 456 485 513 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 116 126 137 158 168 179 189 210 231 263 315 368 420 462 504 535 567
Test Current IT (mA) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Stand-off Voltage VWM (V) 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53.0 58.1 64.1 70.1 77.8 85.5 94.0 102 111 128 136 145 154 171 185 214 256 300 342 376 408 434 459
Maximum Reverse Leakage at VWM ID(3) (µA) 1000 500 200 50 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Maximum Maximum Maximum Peak Pulse Clamping Temp. Current Voltage at Coefficient IPPM(2) IPPM of V(BR) (A) VC (V) (%/°C) 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.8 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.9 3.6 3.4 2.9 2.7 2.6 2.4 2.2 1.8 1.74 1.45 1.24 1.10 1.00 0.91 0.86 0.81 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110
Pulse test: tp 50ms Surge current waveform per Fig. 3 and derate per Fig. 2 For bidirectional types with VWM of 10 volts and less, the ID limit is doubled All terms and symbols are consistent with ANSI/IEEE C62.35
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Document Number 88370 13-Nov-02
P6SMB Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Peak Pulse Power Rating Curve
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100 100
Fig. 2 Pulse Derating Curve
PPPM -- Peak Pulse Power (kW)
75
10
50
1 0.2 x 0.2" (0.5 x 0.5mm) Copper Pad Areas 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms
25
0
0
25
50
75
100
125
150
175
200
td -- Pulse Width (sec.)
TA -- Ambient Temperature (°C)
Fig. 3 Pulse Waveform
150 6,000
Fig. 4 Typical Junction Capacitance
CJ -- Junction Capacitance (pF)
Measured at Zero Bias
IPPM -- Peak Pulse Current, % IRSM
tr = 10µsec. Peak Value IPPM
100
TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
1,000
Half Value -- IPP 2 IP P M 50 10/1000µsec. Waveform as defined by R.E.A.
100
VR, Measured at Stand-Off Voltage, VWM Uni-Directional Bi-Directional TJ = 25°C f = 1.0MHz Vsig = 50mVp-p 100 200
td 0 0 1.0 2.0 3.0 4.0 10 1 10
t -- Time (ms)
VWM -- Reverse Stand-Off Voltage (V)
Fig. 5 Typical Transient Thermal Impedance
IFSM -- Peak Forward Surge Current (A)
100 200
Fig. 6 Maximum Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave (JEDEC Method) Unidirectional Only 100
Transient Thermal Impedance (°C/W)
10
1.0
0.1 0.001
10 0.01 0.1 1 10 100 1000 1 10 100
tp -- Pulse Duration (sec) Document Number 88370 13-Nov-02
Number of Cycles at 60HZ www.vishay.com 3
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