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Details, datasheet, quote on part number:S504TX
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Datasheet text preview:
S504TX/S504TXR/S504TXRW
Vishay Semiconductors
MOSMIC® for TVTuner Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
AGC C block RF in RG1
13650
C block G2 G1 S D
RFC VDD(VDS) RF out C block
VGG (VRG1)
Features
D Easy Gate 1 switch-off with PNP switching
transistors inside PLL
D High gain, medium forward transadmittance
(24 mS typ.)
D High AGC-range with less steep slope D Integrated gate protection diodes D Low noise figure
2 1
D Improved cross modulation at gain reduction D SMD package
1
2
3
4
13628
4
3
13629
S504TX Marking: X04 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
S504TXR Marking: X6R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
4
3
13633
S504TXRW Marking: WX6 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85079 Rev. 1, 05-Jun-01
www.vishay.com 1 (5)
S504TX/S504TXR/S504TXRW
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage g Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol VDS ID ±IG1/G2SM +VG1S -VG1S ±VG2SM Ptot T Ch Tstg Value 8 25 10 6 1.5 6 200 150 55 to +150 Unit V mA mA V V V mW °C °C
Tamb 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain - source operating current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage ID = 10
mA,
Test Conditions VG1S = VG2S = 0
Symbol V(BR)DSS ±V(BR)G1SS ±V(BR)G2SS +IG1SS ±IG2SS IDSO VG1S(OFF)
Min 12 7 7
Typ
Max Unit V 10 10 20 20 V V nA nA mA V V
±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kW VDS = 5 V, VG2S = 4 V, ID = 20
8 0.5 0.8
13
18 1.3
mA mA
VDS = VRG1 = 5 V, RG1 = 56 kW, ID = 20
VG2S(OFF)
1.0
1.4
Remark on driving the MOSMIC and improving intermodulation behavior:
By setting RG1 smaller than 56 kW, typical value of IDSO will raise and improved intermodulation behavior will be performed.
www.vishay.com 2 (5)
Document Number 85079 Rev. 1, 05-Jun-01
S504TX/S504TXR/S504TXRW
Vishay Semiconductors Electrical AC Characteristics
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kW, ID = IDSO, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Cross modulation Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps F F Xmod Xmod Min 20 Typ 24 1.6 15 0.9 26 21 45 1 1.3 Max 28 2.0 30 Unit mS pF fF pF dB dB dB dB dB dBmV dBmV
GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz
17 40
90 100 105
Dimensions of S504TX in mm
96 12240
Document Number 85079 Rev. 1, 05-Jun-01
www.vishay.com 3 (5)
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