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Part: Si7461DP
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> P-Channel
Description: P-channel 60-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7461DP datasheet File size : 63 kB
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Datasheet text preview:
Si7461DP
New Product
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-60
FEATURES
ID (A)
-14.4 -12.6
rDS(on) (W)
0.0145 @ VGS = -10 V 0.019 @ VGS = -4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives
S
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm G
4 D 8 7 D 6 D 5 D
G
D P-Channel MOSFET
Bottom View Ordering Information: Si7461DP-T1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
Steady State
-60 "20
Unit
V
-14.4 -11.5 -60 -4.5 50 125 5.4 3.4 -55 to 150
-8.6 -6.9 A -1.6
mJ 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72567 S-40411--Rev. C, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 52 1.0
Maximum
23 65 1.3
Unit
_C/W
1
Si7461DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On State Resistancea On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V VDS = -60 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -14.4 A VGS = -4.5 V, ID = -12.6 A VDS = -15 V, ID = -14.4 A IS = -4.5 A, VGS = 0 V -40 0.0115 0.015 31 -0.8 -1.2 0.0145 0.019 -1 -3 "100 -1 -10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -4.5 A, di/dt = 100 A/ms VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -10 V, Rg = 6 W VDS = -30 V, VGS = -10 V, ID = -14.4 A 121 20 32 3 20 20 205 90 45 30 30 310 135 70 ns W 190 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20
Output Characteristics
60 50
Transfer Characteristics
VGS = 10 thru 4 V I D - Drain Current (A)
I D - Drain Current (A)
40 30 20 TC = 125_C 10 0 0.0 25_C
3V 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
-55_C 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V) Document Number: 72567 S-40411--Rev. C, 15-Mar-04
www.vishay.com
2
Si7461DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
Vishay Siliconix
On-Resistance vs. Drain Current
8000 7000
Capacitance
r DS(on) - On-Resistance ( W )
0.016
C - Capacitance (pF)
VGS = 4.5 V VGS = 10 V
6000 5000 4000 3000 2000 Coss 1000 Crss 0 10 20 30
Ciss
0.012
0.008
0.004
0.000 0 10 20 30 40 50 60
0
40
50
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 17 A
Gate Charge
1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 14.4 A
8
6
4
2
0 0 25 50 75 100 125 Qg - Total Gate Charge (nC)
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
70
0.04
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.03 ID = 14.4 A 0.02
TJ = 150_C 10
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72567 S-40411--Rev. C, 15-Mar-04
www.vishay.com
3
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