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Part: Si7463DP
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> P-Channel
Description: P-channel 40-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7463DP datasheet File size : 63 kB
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Datasheet text preview:
Si7463DP
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-40
FEATURES
ID (A)
-18.6 -15
rDS(on) (W)
0.0092 @ VGS = -10 V 0.014 @ VGS = -4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives
S
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm G
4 D 8 7 D 6 D 5 D
G
D P-Channel MOSFET
Bottom View Ordering Information: Si7463DP-T1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
-40 "20
Unit
V
-18.6 -15 -60 -4.5 5.4 3.4 -55 to 150
-11 -8.9 A
-1.6 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72440 S-32411--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 52 1.0
Maximum
23 65 1.3
Unit
_C/W
1
Si7463DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On State Resistancea On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -18.6 A VGS = -4.5 V, ID = -15 A VDS = -15 V, ID = -18.6 A IS = -4.5 A, VGS = 0 V -40 0.0075 0.011 50 -0.8 -1.2 0.0092 0.014 -1 -3 "100 -1 -10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -4.5 A, di/dt = 100 A/ms VDD = -20 V, RL = 20 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -20 V, VGS = -10 V, ID = -18.6 A 121 19.2 30.3 2.7 20 25 200 100 45 30 40 300 150 70 ns W 140 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 10 0 0 1
Output Characteristics
VGS = 10 thru 4 V
60 50 40 30 20 10 0 0.0
Transfer Characteristics
I D - Drain Current (A)
3V
I D - Drain Current (A)
TC = 125_C 25_C -55_C
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 72440 S-32411--Rev. B, 24-Nov-03
2
Si7463DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.016 0.014 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.012 0.010 0.008 0.006 0.004 0.002 0.000 0 10 20 30 40 50 60 VGS = 10 V
On-Resistance vs. Drain Current
8000 7000 6000 5000 4000 3000 2000
Capacitance
VGS = 4.5 V
Ciss
Coss 1000 Crss 0 0 8 16 24 32 40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 18.6 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 18.6 A
6
r DS(on) - On-Resistance (W ) (Normalized) 50 75 100 125
8
1.4
1.2
4
1.0
2
0.8
0 0 25 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
0.04
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
0.03 ID = 18.6 A 0.02
TJ = 150_C 10
ID = 5 A
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72440 S-32411--Rev. B, 24-Nov-03
www.vishay.com
3
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