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Part: Si7464DP
Category:
Description: N-channel 200-V (D-S) Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7464DP datasheet File size : 63 kB
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Si7464DP
New Product
Vishay Siliconix
N-Channel 200-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
200
FEATURES
ID (A)
2.8 2.7
rDS(on) (W)
0.24 @ VGS = 10 V 0.26 @ VGS = 6 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch
PowerPAKt SO-8
D
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
G
D 8 7 6 5 D D D
S N-Channel MOSFET Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS
10 secs
200 "20 2.8
Steady State
Unit
V
1.8 1.5 1.5 8 3 0.45 mJ 1.8 1.1 -55 to 150 W _C A
ID IS IDM IAS EAS
2.2 3.5
4.2 PD TJ, Tstg 2.6
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Guaranteed by design, not subject to production testing. Document Number: 72052 S-22097--Rev. A, 02-Dec-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
25 60 2.9
Maximum
30 70 3.5
Unit
_C/W
1
Si7464DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.8 A VGS = 6 V, ID = 2.7 A VDS = 15 V, ID = 2.8 A IS = 3.5 A, VGS = 0 V 8 0.195 0.210 8 0.8 1.2 0.24 0.26 S V 2 4 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.5 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 100 V, VGS = 10 V, ID = 2.8 A 12 2.5 3.8 2.5 10 12 15 15 60 15 20 25 25 90 ns W 18 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8 VGS = 10 thru 5 V 6 I D - Drain Current (A) I D - Drain Current (A) 6 8
Transfer Characteristics
4
4
2 4V 3V 0 0 2 4 6 8
2
TC = 150_C 25_C
-55 _C
0 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72052 S-22097--Rev. A, 02-Dec-02
Si7464DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.4 800
Vishay Siliconix
Capacitance
r DS(on) - On-Resistance ( W )
V GS = 6 V 0.2 VGS = 10 V 0.1
C - Capacitance (pF)
0.3
600
Ciss
400
200
Crss Coss
0.0 0 2 4 ID - Drain Current (A) 6 8
0 0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 2.8 A 2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 2.8 A
6
r DS(on) - On-Resistance ( W) (Normalized) 6 9 12
8
2.0
1.5
4
1.0
2
0.5
0 0 3
0.0 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on) - On-Resistance ( W )
0.4
I S - Source Current (A)
0.3
ID = 2.8 A
TJ = 150_C 1
0.2
TJ = 25_C
0.1
0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) Document Number: 72052 S-22097--Rev. A, 02-Dec-02
VGS - Gate-to-Source Voltage (V)
www.vishay.com
3
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