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Part: Si7483DP
Category:
Description: P-channel 30-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7483DP datasheet File size : 63 kB
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Si7483DP
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
-- 30
FEATURES
ID (A)
-- 24 -- 17
rDS(on) ()
0.005 @ VGS = -- 10 V 0.0095 @ VGS = -- 4.5 V
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D Battery and Load Switching -- Notebook Computers -- Notebook Battery Packs
PowerPAKt SO -8
S
6.15 mm
S 1 2 S 3 S
5.15 mm G
4 G
D 8 7 D 6 D 5 D
D
Bottom View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
S y mb o l
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
-- 30 20
Unit
V
-- 24 -- 19 -- 60 -- 4.5 5.4 3.4 -- 55 to 150
-- 14 -- 11 A
-- 1.6 1.9 1.2 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71940 S-21441--Rev. A, 19-Aug-02 www.vishay.com t 10 sec Steady State Steady State
S y mb o l
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7483DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -- 250 mA VDS = 0 V, VGS = 20 V VDS = -- 24 V, VGS = 0 V VDS = -- 24 V, VGS = 0 V, TJ = 70_C VDS = -- 5 V, VGS = -- 10 V VGS = -- 10 V, ID = -- 24 A VGS = -- 4.5 V, ID = -- 17 A VDS = -- 15 V, ID = -- 24 A IS = -- 2.9 A, VGS = 0 V -- 30 0.0041 0.0077 70 -- 0.75 -- 1.1 0.005 0.0095 -- 1.0 -- 3.0 100 -- 1 -- 10 V nA mA A S V
S y mb o l
Test Condition
Min
Typ
Ma x
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = -- 2.9 A, di/dt = 100 A/ms VDD = -- 15 V, RL = 15 ID -- 1 A, VGEN = -- 10 V, RG = 6 VDS = -- 15 V, VGS = -- 10 V, ID = -- 24 A 120 18.3 33.2 25 40 220 125 4 87 135 40 65 350 200 ns ns 180 nC
Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 10
Output Characteristics
VGS = 10 thru 4 V
60 50 40 30 20 10 3V 0 0.0
Transfer Characteristics
I D -- Drain Current (A)
I D -- Drain Current (A)
TC = 125_C 25_C -- 55_C
0 0 1 2 3 4 5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS -- Drain-to-Source Voltage (V) www.vishay.com
VGS -- Gate-to-Source Voltage (V) Document Number: 71940 S-21441--Rev. A, 19-Aug-02
2
Si7483DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
Vishay Siliconix
On-Resistance vs. Drain Current
10000
Capacitance
r DS(on) -- On-Resistance ( )
0.008
VGS = 4.5 V C -- Capacitance (pF)
8000
Ciss
0.006 VGS = 10 V 0.004
6000
4000
0.002
2000 C rss
Coss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID -- Drain Current (A)
VDS -- Drain-to-Source Voltage (V)
10 V GS -- Gate-to-Source Voltage (V) VDS = 15 V ID = 24 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 24 A
6
r DS(on) -- On-Resistance ( ) (Normalized) 40 60 80 100 120
8
1.4
1.2
4
1.0
2
0.8
0 0 20 Qg -- Total Gate Charge (nC)
0.6 -- 50
-- 25
0
25
50
75
100
125
150
TJ -- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.020
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10 TJ = 25_C
r DS(on) -- On-Resistance ( )
0.016
I S -- Source Current (A)
0.012 ID = 24 A 0.008
0.004
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD -- Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 10 VGS -- Gate-to-Source Voltage (V)
Document Number: 71940 S-21441--Rev. A, 19-Aug-02
www.vishay.com
3
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