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Part: Si7485DP
Category:
Description: P-channel 20-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7485DP datasheet File size : 63 kB
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Si7485DP
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.0073 @ VGS = - 4.5 V - 20 0.0090 @ VGS = - 2.5 V 0.013 @ VGS = - 1.8 V
FEATURES
ID (A)
- 20 - 18 - 15
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Battery Switch for Portable Devices
PowerPAK SO-8
S 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm G
D P-Channel MOSFET
Bottom View Ordering Information: Si7485DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
- 20 "8
Unit
V
- 20 - 16.5 - 50 - 4.5 5 3.2 - 55 to 150
- 12.5 - 9.5 A
- 1.6 1.8 1.1 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72275 S-31416--Rev. A, 07-Jul-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
20 54 1.7
Maximum
25 68 2.2
Unit
_C/W
1
Si7485DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 1 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 70_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 20 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 18 A VGS = - 1.8 V, ID = - 15 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 20 A IS = - 4.5 A, VGS = 0 V - 40 0.006 0.0074 0.0106 80 - 0.62 - 1.1 0.0073 0.0090 0.013 S V W - 0.4 - 0.9 "100 -1 - 10 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 5 V, ID = - 20 A 99 11.5 29 2.4 80 140 360 170 55 120 210 540 260 80 ns W 150 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
Transfer Characteristics
30
1.5 V
30
20
20 TC = 125_C 10 25_C - 55_C
10
0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VGS - Gate-to-Source Voltage (V) Document Number: 72275 S-31416--Rev. A, 07-Jul-03
2
Si7485DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 r DS(on) - On-Resistance ( W ) 11000
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.016
8800
Ciss
0.012
VGS = 1.8 V VGS = 2.5 V
6600
0.008
4400
0.004
VGS = 4.5 V
2200 Crss
Coss
0.000 0 10 20 30 40 50
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) VDS = 10 V ID = 20 A 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 20 A 1.4
r DS(on) - On-Resistance (W ) (Normalized)
1.2
1.0
0.8
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.030
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
r DS(on) - On-Resistance ( W )
TJ = 150_C
0.024
ID = 20 A
0.018
1
TJ = 25_C
0.012
0.006
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72275 S-31416--Rev. A, 07-Jul-03
www.vishay.com
3
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