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Part: Si7491DP
Category:
Description: P-channel 30-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7491DP datasheet File size : 63 kB
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Si7491DP
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
FEATURES
ID (A)
- 18 - 14
rDS(on) (W)
0.0085 @ VGS = - 10 V 0.013 @ VGS = - 4.5 V
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Battery and Load Switching - Notebook and Tablet Computers - Notebook and Tablet Battery Packs
PowerPAK SO-8
S
6.15 mm
S 1 2 S 3 S
5.15 mm G
4 G
D 8 7 D 6 D 5 D
D
Bottom View Ordering Information: Si7491DP-T1
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
- 30 "20
Unit
V
- 18 - 14 - 50 - 4.5 5 3.2 - 55 to 150
- 11 -8 A
- 1.6 1.8 1.1 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72276 S-31415--Rev. A, 07-Jul-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
20 54 1.7
Maximum
25 68 2.2
Unit
_C/W
1
Si7491DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On State Resistancea On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 18 A VGS = - 4.5 V, ID = - 14 A VDS = - 15 V, ID = - 18 A IS = - 4.5 A, VGS = 0 V - 30 0.007 0.0105 46 - 0.74 - 1.1 0.0085 0.013 - 1.0 - 3.0 "100 -1 - 10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 15 V, VGS = - 5 V, ID = - 18 A 56 12 25 150 190 120 90 2.5 50 80 225 290 180 140 W ns ns 85 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 20
Transfer Characteristics
30
20 3V 10
TC = 125_C 10 0 0.0 25_C - 55_C
0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V) Document Number: 72276 S-31415--Rev. A, 07-Jul-03
2
Si7491DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 r DS(on) - On-Resistance ( W ) 6500
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.016
5200
Ciss
0.012
VGS = 4.5 V VGS = 10 V
3900
0.008
2600
0.004
1300 Crss
Coss
0.000 0 10 20 30 40 50
0 0 5 10 15 20 25 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 13 26 39 52 65 Qg - Total Gate Charge (nC) VDS = 15 V ID = 18 A 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 18 A 1.4
r DS(on) - On-Resistance (W ) (Normalized)
1.2
1.0
0.8
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.025
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
TJ = 150_C
r DS(on) - On-Resistance ( W )
0.020
0.015 ID = 18 A 0.010
1
TJ = 25_C
0.005
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72276 S-31415--Rev. A, 07-Jul-03
www.vishay.com
3
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