|
|
Part: Si7501DN
Category:
Description: Complementary 30-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7501DN datasheet File size : 63 kB
Request For quote: Find where to buy Si7501DN
Datasheet text preview:
Si7501DN
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
P-Channel -30
FEATURES
rDS(on) (W)
0.051 @ VGS = -10 V 0.075 @ VGS = -6 V 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V
ID (A)
-6.4 -5.3 7.7 6.5
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Backlight Inverter D DC/DC Converter - 4-Cell Battery
N-Channel
30
PowerPAK 1212-8
S1
3.30 mm
S1 1 2 G1 3
3.30 mm
S2 4 G2
G1
D
D 8 7 D 6 D 5 D
G2
Bottom View Ordering Information: Si7501DN-T1--E3
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
P-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
N-Channel 10 secs Steady State
30 "20
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
-30 "25
Unit
V
-6.4 -5.1 -25 -2.6 3.1 3
-4.5 -3.6
7.7 4.7 25
5.4 4.3 A
-1.3 1.6 1.0 -55 to 150
2.6 3.1 2
1.3 1.6 1.0 W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Case) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72173 S-32419--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
32 65 5
Maximum
40 81 6.3
Unit
_C/W
1
Si7501DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "25 V VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS = 30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w -5 V, VGS = -10 V VDS p 5 V, VGS = 10 V VGS = -10 V, ID = -6.4 A Drain-Source On State Resistancea On-State rDS(on) VGS = 10 V, ID = 7.7 A VGS = -6 V, ID = -5.3 A VGS = 4.5 V, ID = 6.5 A Forward Transconductancea gfs VSD VDS = -15 V, ID = -6.4 A VDS = 15 V, ID = 7.7 A IS = -1.7 A, VGS = 0 V IS = 1.7 A, VGS = 0 V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch -25 25 0.041 0.028 0.055 0.040 13 15 -0.80 0.80 -1.2 1.2 0.051 0.035 0.075 0.050 S W -1.0 1.0 -3 3 "200 "100 -1 1 -5 5 A mA V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
IGSS
nA
Diode Forward Voltagea
V
Dynamicb
Total Total Gate Charge Qg P-Channel VDS = -15 V, VGS = -10 V, ID = -6.4 A N-Channel VDS = 15 V, VGS = 10 V ID = 7.7 A V V, 77 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDD = -15 V, RL = 5 W ID ^ -3 A, VGEN = -10 V, RG = 1 W N-Channel VDD = 15 V RL = 5 W V, ID ^ 3 A, VGEN = 10 V, RG = 1 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch IF = -1.7 A, di/dt = 100 A/ms IF = 1.7 A, di/dt = 100 A/ms P-Ch N-Ch 12.5 9 2.5 2 3.6 1.3 9 3 10 10 20 15 25 20 30 10 25 20 15 15 30 25 40 30 45 15 50 40 ns W 19 14 nC
Gate-Source Charge
Qgs Qgd Rg td(on) tr td(off) tf trr
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time Source-Drain Reverse Recovery Time
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72173 S-32419--Rev. B, 24-Nov-03
Si7501DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25 VGS = 10 thru 6 V 20 I D - Drain Current (A) 5V I D - Drain Current (A) 20 25 TC = -55_C 25_C
P-CHANNEL
Transfer Characteristics
15
15
125_C
10
4V
10
5 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
5
0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V)
0.16 r DS(on) - On-Resistance ( W )
On-Resistance vs. Drain Current
1000
Capacitance
0.12
C - Capacitance (pF)
800 Ciss
600
0.08 VGS = 6 V VGS = 10 V 0.04
400 Coss Crss
200
0.00 0 5 10 15 20 25
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 6.4 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 6.4 A 1.4
6
r DS(on) - On-Resistance (W ) (Normalized)
1.2
4
1.0
2
0.8
0 0 3 6 9 12 15 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 72173 S-32419--Rev. B, 24-Nov-03
www.vishay.com
3
Others parts begin by si
SI-1 SI-2 SI-3 SI-4 SI-5 SI-6 SI-7 SI-8 SI-9 SI-10 SI-11
|
|
|
