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Part: Si7540DP
Category:
Description: N-and P-channel 12-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7540DP datasheet File size : 63 kB
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Si7540DP
Vishay Siliconix
N- and P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 12
FEATURES
ID (A)
11.8 9.8 - 8.9 - 6.9
rDS(on) (W)
0.017 @ VGS = 4.5 V 0.025 @ VGS = 2.5 V 0.032 @ VGS = - 4.5 V 0.053 @ VGS = - 2.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency D 100% Rg Tested
P-Channel
- 12
APPLICATIONS
D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz Operation D Synchronous Buck, Shoot-Thru Resistant
D1 S2
PowerPAK SO-8
6.15 mm
S1
1 2
G1 S2
5.15 mm
3 4
G2
G2 G1
D1
8 7
D1 D2
6 5
D2
S1 N-Channel MOSFET
D2 P-Channel MOSFET
Bottom View Ordering Information: Si7540DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
P-Channel 10 secs Steady State
- 12 "8
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
12 "8
Unit
V
11.8 9.5
7.6 6.1 20
- 8.9 - 7.1
- 5.7 - 4.6 A
2.9 3.5 2.2
1.1 1.4 0.9 - 55 to 150
- 2.9 3.5 2.2
- 1.1 1.4 0.9 W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
N-Channel Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71911 S-31728--Rev. D, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
P-Channel Typ
26 60 3.9
Symbol
RthJA RthJC
Typ
26 60 3.9
Max
35 85 5.5
Max
35 85 5.5
Unit
_C/W
1
Si7540DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 55_C VDS = - 9.6 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V VDS p - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 11.8 A Drain-Source On State Resistancea On-State rDS(on) VGS = - 4.5 V, ID = - 8.9 A VGS = 2.5 V, ID = 9.8 A VGS = - 2.5 V, ID = - 6.9 A Forward Transconductancea gfs VSD VDS = 5 V, ID = 11.8 A VDS = - 5 V, ID = - 8.9 A IS = 2.9 A, VGS = 0 V IS = - 2.9 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.014 0.026 0.020 0.043 32 23 0.77 - 0.8 1.2 - 1.2 0.017 0.032 0.025 0.053 S W 0.6 - 0.6 1.5 - 1.5 "100 "100 1 -1 5 -5 A mA V
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
IGSS
nA
Diode Forward Voltagea
V
Dynamicb
Total Total Gate Charge Qg N-Channel VDS = 6 V, VGS = 4.5 V, ID = 11.8 A P-Channel VDS = - 6 V VGS = - 4.5 V ID = - 8.9 A V, V, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = - 6 V, RL = 6 W V ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 2.9 A, di/dt = 100 A/ms IF = - 2.9 A, di/dt = 100 A/ms N-Ch P-Ch 0.5 1.5 11.5 13 3.2 4.1 2.5 1.9 1.7 3.5 30 35 50 42 60 54 25 17 40 40 2.5 5.6 45 55 75 65 90 85 40 30 80 80 ns W 17 20 nC
Gate-Source Charge
Qgs Qgd
Gate-Drain Charge
Gate Resistance
Rg
Turn-On Delay Time
td(on) tr td(off) tf trr
Rise Time
Turn-Off Delay Time
Fall Time Source-Drain Reverse Recovery Time
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71911 S-31728--Rev. D, 18-Aug-03
Si7540DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20
N-CHANNEL
Transfer Characteristics
12 2V 8
12
8 TC = 125_C 4 25_C - 55_C
4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05 r DS(on) - On-Resistance ( W ) 2500
Capacitance
C - Capacitance (pF)
0.04
2000 Ciss 1500
0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01
1000 Coss 500 Crss
0.00 0 4 8 12 16 20
0 0 2 4 6 8 10 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 11.8 A 4 1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 11.8 A 1.4
3
r DS(on) - On-Resistance (W ) (Normalized) 6 9 12 15
1.2
2
1.0
1
0.8
0 0 3 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71911 S-31728--Rev. D, 18-Aug-03
www.vishay.com
3
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