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Part: Si7703EDN
Category:
Description: P-channel 20-V (D-S) MOSFET With Schottky Diode
Company: Vishay Intertechnology
Datasheet: Download Si7703EDN datasheet File size : 338 kB
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Si7703EDN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (A)
6.3 5.3 4.6
rDS(on) (W)
0.048 @ VGS = 4.5 V 0.068 @ VGS = 2.5 V 0.090 @ VGS = 1.8 V
D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D Charger Switching
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V) Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
1.0
PowerPAKt 1212-8
S
K
3.30 mm
A
1 2
3.30 mm
A S
3 4
K
G
G
K
8 7
3 kW
D
6 5
D
D P-Channel MOSFET
A
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a _ Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x1" FR4 Board. Document Number: 71429 S-03709--Rev. A, 14-May-01 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C
Symbol
VDS VKA VGS ID IDM IS IF IFM
10 sec
20 20 "12 6.3 4.5 20 2.3 1.0 7 2.8 1.5 2.0 1.0
Steady State
Unit
V
"12 4.3 3.1 A 1.1
1.3 0.7 1.1 0.6 55 to 150 _C W
1
Si7703EDN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Junction-to-Ambienta Steady State
New Product
Device
MOSFET Schottky MOSFET Schottky MOSFET
Symbol
Typical
35 51
Maximum
44 64 94 115 5 12
Unit
RthJA
75 91 4
_C/W
Junction-to-Case (Drain)
Steady State
Schottky
RthJC
10
Notes a. Surface Mounted on 1" x 1" FR4 Board.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 800 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS v 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.3 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 5.3 A VGS = 1.8 V, ID = 1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 6.3 A IS = 2.3 A, VGS = 0 V 20 0.041 0.057 0.072 14 0.8 1.2 0.048 0.068 0.090 S V W 0.45 "1.5 "100 1 5 V mA mA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current On-State Drain Currenta
IDSS ID(on)
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 6.3 A GS 12 2.5 2.9 2.5 4 15 12 4 6 23 18 ns 18 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
VF
Test Condition
IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V
Min
Typ
0.42 0.33 0.002 0.10 1.5 31
Max
0.48 0.4 0.100 1 10
Unit
V
Maximum Reverse Leakage Current
Irm CT
mA
Junction Capacitance
pF
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2
Document Number: 71429 S-03709--Rev. A, 14-May-01
Si7703EDN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8 10,000 1,000 I GSS Gate Current (mA) 6 I GSS Gate Current (m A) 100 10 1 0.1 TJ = 150_C
Vishay Siliconix
MOSFET
Gate Current vs. Gate-Source Voltage
4
2
TJ = 25_C
0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15
VGS Gate-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
Output Characteristics
20 VGS = 5 thru 2.5 V 16 I D Drain Current (A) I D Drain Current (A) 16 20
Transfer Characteristics
TC = 55_C 25_C 125_C 12
12
2V
8 1.5 V 4
8
4
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15 VGS = 1.8 V 0.12 C Capacitance (pF) 2000
Capacitance
r DS(on) On-Resistance ( W )
1600
Ciss
0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 0.03
1200
800
400 Crss 0 4
Coss
0.00 0 4 8 12 16 20
0
8
12
16
20
ID Drain Current (A) Document Number: 71429 S-03709--Rev. A, 14-May-01
VDS Drain-to-Source Voltage (V)
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3
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