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Part: Si7705DN
Category:
Description: Single P-channel 20-V (D-S) MOSFET With Schottky Diode
Company: Vishay Intertechnology
Datasheet: Download Si7705DN datasheet File size : 338 kB
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Si7705DN
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
- 20
FEATURES
ID (A)
- 6.3 - 5.3 - 4.6
rDS(on) (W)
0.048 @ VGS = - 4.5 V 0.068 @ VGS = - 2.5 V 0.090 @ VGS = - 1.8 V
D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKr Package with Low 1.07-mm Profile
APPLICATIONS
D Charger Switching
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V) Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
1.0
PowerPAK 1212-8
S
K
3.30 mm
A
1 2
A S
3.30 mm
3 4
G
G
K
8 7
K D
6 5
D
D Bottom View Ordering Information: Si7705DN-T1 P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x1" FR4 Board. Document Number: 71607 S-22520--Rev. B, 27-Jan-03 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C
Symbol
VDS VKA VGS ID IDM IS IF IFM
10 sec
- 20 20 "8 - 6.3 - 4.5 - 20 - 2.3 1.0 7 2.8 1.5 2.0 1.0
Steady State
Unit
V
- 4.3 - 3.1 - 1.1 A
1.3 0.7 1.1 0.6 - 55 to 150 _C W
1
Si7705DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Junction-to-Ambienta Steady State St t
Device
MOSFET Schottky MOSFET Schottky MOSFET Schottky
Symbol
Typical
35 51
Maximum
44 64 94 115 5 12
Unit
RthJA
75 91
_C/W
Junction-to-Case (Drain)
Steady State
RthJC
4 10
Notes a. Surface Mounted on 1" x 1" FR4 Board.
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.3 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.3 A VGS = - 1.8 V, ID = - 1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 6.3 A IS = - 2.3 A, VGS = 0 V - 20 0.040 0.054 0.070 14 - 0.8 - 1.2 0.048 0.068 0.090 S V W - 0.45 "100 -1 -5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A , , 11 2.7 1.9 70 75 20 45 105 110 30 70 ns 17 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Symbol
VF
Test Condition
IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 85_C Vr = 20 V, TJ = 125_C Vr = 10 V
Min
Typ
0.42 0.33 0.002 0.10 1.5 31
Max
0.48 0.4 0.100 1 10
Unit
V
Maximum Reverse Leakage Current g Junction Capacitance www.vishay.com
Irm CT
mA pF
2
Document Number: 71607 S-22520--Rev. B, 27-Jan-03
Si7705DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
MOSFET
20
Output Characteristics
VGS = 5 thru 2.5 V
Transfer Characteristics
TC = - 55_C
16 I D - Drain Current (A) I D - Drain Current (A) 2V 12
16
25_C 125_C
12
8 1.5 V 4 1, 0.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
8
4
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
0.20
On-Resistance vs. Drain Current
2000
Capacitance
r DS(on) - On-Resistance ( W )
0.16 C - Capacitance (pF)
1600
Ciss
0.12 VGS = 1.8 V 0.08 VGS = 2.5 V VGS = 4.5 V 0.04
1200
800
400 Crss 0 4
Coss
0.00 0 4 8 12 16 20
0
8
12
16
20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
8 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.3 A 6
Gate Charge
1.5
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 6.3 A
r DS(on) - On-Resistance (W ) (Normalized)
1.3
4
1.1
2
0.9
0 0 3 6 9 12 15 18 21 Qg - Total Gate Charge (nC)
0.7 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71607 S-22520--Rev. B, 27-Jan-03
www.vishay.com
3
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