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Part: Si7804DN
Category:
Description: N-channel 30-V (D-S) Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7804DN datasheet File size : 338 kB
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Si7804DN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
10 8
rDS(on) (W)
0.0185 @ VGS = 10 V 0.030 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D DC/DC Conversion
PowerPAK 1212-8
D 3.30 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
3.30 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7804DN-T1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 10 7.5 40 2.9 3.5 1.9
Steady State
Unit
V
6.5 5.0 A
1.2 1.5 0.8 -55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72317 S-32411--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
28 65 4.5
Maximum
35 81 6.0
Unit
_C/W
1
Si7804DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A VDS = 15 V, ID = 10 A IS = 2.9 A, VGS = 0 V 30 0.015 0.022 16 0.75 1.2 0.0185 0.030 0.8 1.8 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.6 VDS = 15 V, VGS = 5 V, ID = 10 A 8.7 1.5 3.5 1.2 8 12 32 14 30 1.8 15 20 50 25 60 ns W 13 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 35 30 I D - Drain Current (A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 3V I D - Drain Current (A) 4V 40 35 30 25 20 15 10 5 0 0.0
Transfer Characteristics
TC = -55_C 25_C
125_C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V) Document Number: 72317 S-32411--Rev. B, 24-Nov-03
2
Si7804DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.040 r DS(on) - On-Resistance ( W ) 1200 1000 C - Capacitance (pF) VGS = 4.5 V VGS = 10 V 0.016 800 600 400 Coss 200 Crss 0.000 0 5 10 15 20 25 30 0 0 4 8 12 16 20 Ciss
Vishay Siliconix
Capacitance
0.032
0.024
0.008
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) VDS = 15 V ID = 9 A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 9 A
r DS(on) - On-Resistance (W ) (Normalized)
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.06 0.05 0.04
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
ID = 9 A 0.03 0.02 0.01 0.00
TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) Document Number: 72317 S-32411--Rev. B, 24-Nov-03
VGS - Gate-to-Source Voltage (V) www.vishay.com
3
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