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Part: Si7806DN
Category:
Description: N-channel 30-V (D-S) Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7806DN datasheet File size : 338 kB
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Si7806DN
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
14.4 12.6
rDS(on) (W)
0.011 @ VGS = 10 V 0.0175 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
APPLICATIONS
D DC/DC Converters Secondary Synchronous Rectifier High-Side MOSFET in Synchronous Buck
PowerPAKt 1212-8
D
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
3.30 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "20 14.4
Steady State
Unit
V
9.2 7.4 40 A
ID IDM IS PD TJ, Tstg
11.6
3.2 3.8 2.0 55 to 150
1.3 1.5 0.8
A W _C
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71869 S-20805--Rev. A, 17-Jun-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
24 65 1.9
Maximum
33 81 2.4
Unit
_C/W
1
Si7806DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 14.4 A VGS = 4.5 V, ID = 12.6 A VDS = 15 V, ID = 14.4 A IS = 3.2 A, VGS = 0 V 40 0.009 0.0145 34 0.77 1.2 0.011 0.0175 S V 1.0 3 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 14.4 A GS VDS = 15 V, VGS = 4.5 V, ID = 14.4 A 8.5 19 3.6 3.0 2 8 12 25 10 35 15 20 40 20 70 ns W 11 24 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 35 VGS = 10 thru 4 V 30 I D Drain Current (A) 25 20 15 10 3V 5 0 0.0 5 0 0.0 I D Drain Current (A) 30 25 20 15 10 TC = 125_C 25_C 40 35
Transfer Characteristics
55_C 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
VDS Drain-to-Source Voltage (V) www.vishay.com
VGS Gate-to-Source Voltage (V) Document Number: 71869 S-20805--Rev. A, 17-Jun-02
2
Si7806DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025 1400 1200 r DS(on) On-Resistance ( W ) 0.020 C Capacitance (pF) 1000 800 600 400 200 0.000 0 5 10 15 20 25 30 35 40 0 0 5 10 15 20 25 30 Crss Coss
Vishay Siliconix
Capacitance
Ciss
0.015
VGS = 4.5 V
0.010
VGS = 10 V
0.005
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
Gate Charge
10 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = A 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 14.4 A
r DS(on) On-Resistance (W ) (Normalized)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0 4 8 12 16 20
0.6 50
25
0
25
50
75
100
125
150
Qg Total Gate Charge (nC)
TJ Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.025 50
On-Resistance vs. Gate-to-Source Voltage
ID = 14.4 A r DS(on) On-Resistance ( W ) 0.020 ID = 5 A 0.015 I S Source Current (A)
TJ = 150_C 10
0.010
TJ = 25_C
0.005
1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD Source-to-Drain Voltage (V)
VGS Gate-to-Source Voltage (V)
Document Number: 71869 S-20805--Rev. A, 17-Jun-02
www.vishay.com
3
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