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Part: Si7810DN
Category:
Description: N-channel 100-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7810DN datasheet File size : 338 kB
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Si7810DN
New Product
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
FEATURES
ID (A)
5.4 4.6
rDS(on) (W)
0.062 @ VGS = 10 V 0.084 @ VGS = 6 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized
APPLICATIONS
D Primary Side Switch D In-Rush Current Limiter
PowerPAKt 1212-8
D
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
3.30 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
100 "20 5.4
Steady State
Unit
V
3.4 2.8 20 A 1.3 19 18 mJ 1.5 0.8 55 to 150 W _C
ID IDM IS IAS EAS
4.3
3.2
3.8 PD TJ, Tstg 2.0
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70689 S-04559--Rev. A, 27-Aug-01 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
26 65 1.9
Maximum
33 81 2.4
Unit
_C/W
1
Si7810DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.4 A VGS = 6 V, ID = 4.6 A VDS = 15 V, ID = 5.4 A IS = 3.2 A, VGS = 0 V 20 0.052 0.070 12 0.78 1.2 0.062 0.084 S V 2 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 50 V, VGS = 10 V, ID = 5.4 A 13.5 3 4.6 10 15 20 15 45 15 25 30 25 90 ns 17 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 7 V 16 I D Drain Current (A) I D Drain Current (A) 6V 16 20
Transfer Characteristics
12
12
8 5V 4 4V 0 0 1 2 3 4 5
8 TC = 125_C 4 25_C 55_C 0 0 1 2 3 4 5 6 7
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 70689 S-04559--Rev. A, 27-Aug-01
Si7810DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20 1000
Vishay Siliconix
Capacitance
r DS(on) On-Resistance ( W )
0.16 C Capacitance (pF)
800
Ciss
0.12 VGS = 6 V VGS = 10 V 0.04
600
0.08
400 Coss 200 Crss
0.00 0 4 8 12 16 20
0 0 20 40 60 80
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
Gate Charge
10 V GS Gate-to-Source Voltage (V) VDS = 50 V ID = 5.4 A 2.2 2.0 r DS(on) On-Resistance (W ) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 0.4 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 5.4 A
8
6
4
2
25
0
25
50
75
100
125
150
Qg Total Gate Charge (nC)
TJ Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.16 20 TJ = 150_C I S Source Current (A) 10 r DS(on) On-Resistance ( W ) 0.12
On-Resistance vs. Gate-to-Source Voltage
ID = 5.4 A 0.08
TJ = 25_C
0.04
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD Source-to-Drain Voltage (V)
VGS Gate-to-Source Voltage (V)
Document Number: 70689 S-04559--Rev. A, 27-Aug-01
www.vishay.com
3
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