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Part: Si7840DP
Category:
Description: N-channel 30-V (D-S) Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7840DP datasheet File size : 338 kB
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Si7840DP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
18 15
rDS(on) (W)
0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D Optimized for "High-Side" Synchronous Rectifier Operation
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7840DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
30 "20 18 14 40 4.1 40 80 5.0 3.2
Steady State
Unit
V
11 8 A 1.6
mJ 1.9 1.2 W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71624 S-31728--Rev. D, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
20 52 2.1
Maximum
25 65 2.6
Unit
_C/W
1
Si7840DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO TAG Drain-Source On-State ResistanceNO TAG Forward TransconductanceNO TAG Diode Forward VoltageNO TAG VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 18 A IS = 4.1 A, VGS = 0 V 30 0.0077 0.0115 40 0.75 1.2 0.0095 0.014 1.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
DynamicNO TAG
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 15 V, VGS = 5.0 V, ID = 18 A 15.5 3.8 6 0.8 17 14 39 19 50 1.2 26 21 60 30 80 ns W 23 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
Output Characteristics
VGS = 10 thru 4 V
40
Transfer Characteristics
32 I D - Drain Current (A) I D - Drain Current (A)
32
24
3V
24
16
16 TC = 125_C 8 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
8
0 0 2 4 6 8 10
0 0.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71624 S-31728--Rev. D, 18-Aug-03
2
Si7840DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
2500
Capacitance
r DS(on) - On-Resistance ( W )
0.016 C - Capacitance (pF) VGS = 4.5 V
2000 Ciss 1500
0.012
0.008
VGS = 10 V
1000 Crss
Coss
0.004
500
0.000 0 8 16 24 32 40
0 0 4 8 12 16 20
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 18 A
Gate Charge
1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 18 A
6
4
2
0 0 6 12 18 24 30 Qg - Total Gate Charge (nC)
r DS(on) - On-Resistance ( W) (Normalized)
8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
40
0.05
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
0.04 ID = 18 A 0.03
I S - Source Current (A)
10
TJ = 150_C
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 71624 S-31728--Rev. D, 18-Aug-03
www.vishay.com
3
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