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Part: Si7844DP
Category:
Description: Dual N-channel 30-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7844DP datasheet File size : 338 kB
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Si7844DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
10 8.5
rDS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 100% Rg Tested
PowerPAKr SO-8
D1
D1
D2
D2
6.15 mm
S1
1 2
G1 S2
5.15 mm
3 4
G2
D1
8 7
G1
D1 D2
G2
6 5
D2
Bottom View Ordering Information: Si7844DP-T1
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM IS PD TJ, Tstg
10 secs
30 "20 10 8.0 20 2.9 3.5 2.2
Steady State
Unit
V
6.4 5.1 A
1.1 1.4 0.9 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71328 S-31728--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
26 60 3.9
Maximum
35 85 5.5
Unit
_C/W
1
Si7844DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.5 A VDS = 15 V, ID = 10 A IS = 2.9 A, VGS = 0 V 20 0.018 0.024 22 0.75 1.2 0.022 0.030 0.8 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 8 10 21 10 40 VDS = 15 V, VGS = 10 V, ID = 10 A 13 2 2.7 3.2 16 20 40 20 80 ns W 20 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 3V 16 20
Transfer Characteristics
12
12
8
8 TC = 125_C 4 25_C - 55_C
4
2V
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71328 S-31728--Rev. B, 18-Aug-03
2
Si7844DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.040 r DS(on) - On-Resistance ( W ) 1000
Capacitance
C - Capacitance (pF)
0.032 VGS = 4.5 V VGS = 10 V 0.016
800 Ciss 600
0.024
400 Coss 200 Crss
0.008
0.000 0 4 8 12 16 20
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 10 A 1.4
6
r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15
1.2
4
1.0
2
0.8
0 0 3 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C 0.04
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
r DS(on) - On-Resistance ( W )
ID = 10 A 0.03
0.02
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71328 S-31728--Rev. B, 18-Aug-03
www.vishay.com
3
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