|
|
Part: Si7846DP
Category:
Description: N-channel 150-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7846DP datasheet File size : 338 kB
Request For quote: Find where to buy Si7846DP
Datasheet text preview:
Si7846DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
150
rDS(on) (W)
0.050 @ VGS = 10 V
ID (A)
6.7
APPLICATIONS
D Primary Side Switch for High Density DC/DC D Telecom/Server 48-V DC/DC D Industrial and 42-V Automotive
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7846DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS IS PD TJ, Tstg
10 secs
150 "20 6.7 5.4 50 25 4.3 5.2 3.3
Steady State
Unit
V
4.0 3.3 A
1.6 1.9 1.2 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71442 S-31728--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
19 52 1.5
Maximum
24 65 1.8
Unit
_C/W
1
Si7846DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V VDS = 120 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VDS = 15 V, ID = 5 A IS = 2.8 A, VGS = 0 V 50 0.041 18 0.75 1.1 0.050 2.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Transconductancea Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 75 V, RL = 15 W ID ^ 5 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 75 V, VGS = 10 V, ID = 5 A 30 8.5 8.5 0.85 12 7 22 10 40 1.4 18 11 33 15 70 ns W 36 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 7 V 40 I D - Drain Current (A) 6V I D - Drain Current (A) 40 50
Transfer Characteristics
30
30
20
20 TC = 125_C 10 25_C - 55_C 0
10
5V 3, 4 V 0 2 4 6 8 10
0
0
1
2
3
4
5
6
7
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71442 S-31728--Rev. B, 18-Aug-03
Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) - On-Resistance ( W ) 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 0 10 20 30 40 50 0 30 60 90 120 150 Crss Coss 0.00
Capacitance
0.08
0.06 VGS = 10 V 0.04
Ciss
0.02
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
20 V GS - Gate-to-Source Voltage (V) VDS = 75 V ID = 5 A 16 2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 5 A 2.0
12
r DS(on) - On-Resistance (W ) (Normalized) 30 45 60
1.5
8
1.0
4
0.5
0 0 15 Qg - Total Gate Charge (nC)
0.0 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.15
On-Resistance vs. Gate-to-Source Voltage
r DS(on) - On-Resistance ( W )
0.12 ID = 5 A 0.09
I S - Source Current (A)
TJ = 150_C 10
0.06
TJ = 25_C
0.03
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71442 S-31728--Rev. B, 18-Aug-03
www.vishay.com
3
Others parts begin by si
SI-1 SI-2 SI-3 SI-4 SI-5 SI-6 SI-7 SI-8 SI-9 SI-10 SI-11
|
|
|
