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Part: Si7850DP
Category:
Description: N-channel 60-V (D-S) Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7850DP datasheet File size : 338 kB
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Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
10.3 8.7
rDS(on) (W)
0.022 @ VGS = 10 V 0.031 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested
APPLICATIONS
PowerPAK SO-8
D Primary Side Switch for 24-V DC/DC Applications D Secondary Synchronous Rectifier
D
6.15 mm
S 1 2 S 3 S
5.15 mm
4 D 8 7 D 6 D 5 D
G
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7850DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS V GS ID IS IDM IAS EAS PD TJ, Tstg
10 secs
60 "20 10.3 7.5 3.7 40 15 11 4.5 2.3
Steady State
Unit
V
6.2 4.5 1.5 A
mJ 1.8 0.9 W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Guaranteed by design, not subject to production testing. Document Number: 71625 S-31727--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
22 58 2.6
Maximum
28 70 3.3
Unit
_C/W
1
Si7850DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentNO TAG Drain-Source On-State ResistanceNO TAG Forward TransconductanceNO TAG Diode Forward VoltageNO TAG V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10.3 A VGS = 4.5 V, ID = 8.7 A VDS = 15 V, ID = 10.3 A IS = 3.8 A, VGS = 0 V 40 0.018 0.025 26 0.85 1.2 0.022 0.031 60 1 "100 1 20 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
DynamicNO TAG
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.8 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 30 V, VGS = 10 V, ID = 10.3 A 18 3.4 5.3 1.4 10 10 25 12 50 2.2 20 20 50 24 80 ns W 27 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
Output Characteristics
40
Transfer Characteristics
32 I D - Drain Current (A)
VGS = 10 thru 5 V
32 I D - Drain Current (A)
24 4V 16
24
16 TC = 150_C 8 25_C - 55_C 3 4 5
8 3V 0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71625 S-31727--Rev. B, 18-Aug-03
2
Si7850DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06 0.05 C - Capacitance (pF) 0.04 VGS = 4.5 V 0.03 0.02 0.01 0.00 0 8 16 24 32 40 VGS = 10 V
On-Resistance vs. Drain Current
1400 1200 1000 800 600 400 200 0 0 Crss 10
Capacitance
r DS(on) - On-Resistance ( W )
Ciss
Coss
20
30
40
50
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 10.3 A
Gate Charge
2.0 1.8 r DS(on) - On-Resistance ( W) (Normalized) 1.6 1.4 1.2 1.0 0.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 10.3 A
8
6
4
2
0 0 4 8 12 16 20 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.06 0.05
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 25_C
0.04 ID = 10.3 A 0.03 0.02 0.01 0.00
1 0.00 0.5 1.0 1.5 2.0 2.5 VSD - Source-to-Drain Voltage (V) Document Number: 71625 S-31727--Rev. B, 18-Aug-03
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
www.vishay.com
3
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