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Part: Si7852DP
Category:
Description: N-channel 80-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7852DP datasheet File size : 338 kB
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Si7852DP
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
80
rDS(on) (W)
0.0165 @ VGS = 10 V 0.022 @ VGS = 6 V
ID (A)
12.5 10.9
D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested
APPLICATIONS
D Primary Side Switch for DC/DC Applications
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7852DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS IS PD TJ, Tstg
10 secs
80 "20 12.5 10.0 50 40 4.7 5.2 3.3
Steady State
Unit
V
7.6 6.1 A
1.7 1.9 1.2 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71627 S-31727--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
19 52 1.5
Maximum
24 65 1.8
Unit
_C/W
1
Si7852DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On State Resistancea On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 64 V, VGS = 0 V VDS = 64 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 6.0 V, ID = 8.0 A VDS = 15 V, ID = 10 A IS = 2.8 A, VGS = 0 V 50 0.0135 0.0175 25 0.75 1.1 0.0165 0.022 W S V 2.0 "100 1 5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 40 V, RL = 40 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W 0.1 VDS = 40 V, VGS = 10 V, ID = 10 A 34 7.5 11.0 0.85 17 11 40 31 45 1 25 17 60 45 75 ns W 41 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 6 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
Transfer Characteristics
30
30
20
5V
20 TC = 125_C 10 25_C - 55_C 0
10 3, 4 V 0 2 4 6 8 10
0
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71627 S-31727--Rev. B, 18-Aug-03
2
Si7852DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04 r DS(on) - On-Resistance ( W ) 3000 2500 0.03 C - Capacitance (pF) 2000 1500 1000 Crss 500 0.00 0 10 20 30 40 50 0 0 20 40 60 80 Coss
Capacitance
Ciss
0.02
VGS = 6 V VGS = 10 V
0.01
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
20 V GS - Gate-to-Source Voltage (V) VDS = 40 V ID = 10 A 16 2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 10 A 2.0
12
r DS(on) - On-Resistance (W ) (Normalized) 30 45 60
1.5
8
1.0
4
0.5
0 0 15 Qg - Total Gate Charge (nC)
0.0 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100 0.08
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
r DS(on) - On-Resistance ( W )
TJ = 150_C
0.06
ID = 10 A
1 TJ = 25_C 0.1
0.04
0.02
0.01 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71627 S-31727--Rev. B, 18-Aug-03
www.vishay.com
3
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