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Part: Si7856DP

Category:

Description: N-channel 30-V (D-S) MOSFET

Company: Vishay Intertechnology

Datasheet: Download Si7856DP datasheet     File size : 338 kB

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Si7856DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
25 23
D TrenchFETr Power MOSFET D Optimized for "Low Side" Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7856DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM IS PD TJ, Tstg
10 secs
30 "20 25 19 60 4.5 5.4 3.4
Steady State
Unit
V
14 11 A
1.6 1.9 1.2 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71850 S-31727--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7856DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0043 95 0.72 1.1 0.0045 0.0055 1.0 1.95 3.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 25 A 34 15 10 1.3 21 15 100 30 50 2.0 35 25 150 45 80 ns W 50 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 10 0 0 1
Output Characteristics
VGS = 10 thru 4 V
60 50 40 30 20
Transfer Characteristics
I D - Drain Current (A)
3V
I D - Drain Current (A)
TC = 125_C 10 0 0.0 25_C - 55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
2
3
4
5
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71850 S-31727--Rev. B, 18-Aug-03
2
Si7856DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
7000
Capacitance
Ciss
r DS(on) - On-Resistance ( W )
0.008 C - Capacitance (pF)
5600
0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002
4200
2800
1400 Crss
Coss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 10 VDS = 15 V ID = 20 A
Gate Charge
1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 20 A
20
30
40
50
r DS(on) - On-Resistance ( W) (Normalized)
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.020
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.016 ID = 20 A
I S - Source Current (A)
0.012
TJ = 25_C
0.008
0.004
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71850 S-31727--Rev. B, 18-Aug-03
0.000 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
www.vishay.com
3


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