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Part: Si7858DP
Category:
Description: N-channel 12-V (D-S) MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7858DP datasheet File size : 338 kB
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Si7858DP
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
12
rDS(on) (W)
0.003 @ VGS = 4.5 V 0.004 @ VGS = 2.5 V
ID (A)
29 23
APPLICATIONS
D Low Output Voltage, High Current Synchronous Rectifiers
PowerPAK SO-8
D 6.15 mm
S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7858DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM IS PD TJ, Tstg
10 secs
12 "8 29 23 60 4.5 5.4 3.4
Steady State
Unit
V
18 14 A
1.6 1.9 1.2 - 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71832 S-31727--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7858DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 29 A VGS = 2.5 V, ID = 23 A VDS = 6 V, ID = 29 A IS = 2.9 A, VGS = 0 V 30 0.0024 0.0031 130 0.75 1.1 0.003 0.004 0.6 0.95 1.3 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 VDS = 6 V, VGS = 4.5 V, ID = 29 A 40 6.7 9.2 1.4 40 40 140 70 50 2.3 60 60 210 100 80 ns W 60 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60 50 40 30 20 10 0 0.0
Output Characteristics
VGS = 5 thru 2 V
60 50 40 30
Transfer Characteristics
I D - Drain Current (A)
I D - Drain Current (A)
TC = 125_C 20 10 0 0.0 25_C - 55_C 0.5 1.0 1.5 2.0
1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71832 S-31727--Rev. B, 18-Aug-03
2
Si7858DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
7500
Capacitance
r DS(on) - On-Resistance ( W )
0.004 VGS = 2.5 V 0.003 VGS = 4.5 V 0.002 C - Capacitance (pF)
6000 Ciss 4500
3000 Coss 1500 Crss
0.001
0.000 0 10 20 30 40 50 60
0 0 2 4 6 8 10 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 25 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 25 A
3
r DS(on) - On-Resistance ( W) (Normalized) 18 27 36 45
4
1.4
1.2
2
1.0
1
0.8
0 0 9 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.015
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C I S - Source Current (A)
r DS(on) - On-Resistance ( W )
0.012
10 TJ = 25_C
0.009
0.006 ID = 25 A 0.003
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 VGS - Gate-to-Source Voltage (V)
Document Number: 71832 S-31727--Rev. B, 18-Aug-03
www.vishay.com
3
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