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Part: Si7860DP
Category:
Description: N-channel Reduced Qg, Fast Switching MOSFET
Company: Vishay Intertechnology
Datasheet: Download Si7860DP datasheet File size : 338 kB
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Si7860DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.008 @ VGS = 10 V 0.011 @ VGS = 4.5 V
ID (A)
18 15
D TrenchFETr Power MOSFET D PWM Optimized for High Efficiency D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested
APPLICATIONS
D Buck Converter - High Side or Low Side D Synchronous Rectifier - Secondary Rectifier
PowerPAK SO-8
6.15 mm
S 1 2 S 3 S
5.15 mm
D
4 D 8 7 D 6 D 5 D
G
G
Bottom View Ordering Information: Si7860DP-T1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM IS IAS EAS PD TJ, Tstg
10 secs
30 "20 18 15 "50 4.1 30 45 5 3.2
Steady State
Unit
V
11 8 A 1.5
mJ 1.8 1.1 W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71854 S-32040--Rev. C, 13-Oct-03 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
20 56 1.8
Maximum
25 70 2.3
Unit
_C/W
1
Si7860DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 18 VGS = 4.5 V, ID = 15 VDS = 15 V, ID = 18 IS = 3 A, VGS = 0 V 40 0.0066 0.0090 60 0.70 1.1 0.008 0.011 1.0 3.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 18 A 13 5 4.0 1.7 18 12 46 19 40 3.2 27 18 70 30 70 ns W 18 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Output Characteristics
VGS = 10 thru 4 V
50
Transfer Characteristics
40 I D - Drain Current (A) I D - Drain Current (A)
40
30
30
20 3V 10
20 TC = 125_C 10 25_C - 55_C 2.5 3.0 3.5 4.0
0 0 2 4 6 8 10
0 0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 71854 S-32040--Rev. C, 13-Oct-03
2
Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
2500
Capacitance
r DS(on) - On-Resistance ( W )
0.012 VGS = 4.5 V 0.009 VGS = 10 V 0.006 C - Capacitance (pF)
2000
Ciss
1500
1000 Coss 500 Crss
0.003
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 4 VDS = 15 V ID = 16 A
Gate Charge
2.00 1.75 1.50 1.25 1.00 0.75 0.50 - 50
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 16 A
8
12
16
20
r DS(on) - On-Resistance ( W) (Normalized)
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.040
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.032
I S - Source Current (A)
0.024
TJ = 25_C
0.016 ID = 16 A 0.008
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71854 S-32040--Rev. C, 13-Oct-03
0.000 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
www.vishay.com
3
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