Details, datasheet, quote on part number: SSTD89A
DescriptionN-channel JFET With Built-in Self-biased Diodes
CompanyVishay Intertechnology
DatasheetDownload SSTD89A datasheet
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Features, Applications

N-Channel JFET with Built-In Self-Biased Diodes

Full Performance from Low Voltage Power Supply: As Low 1.2 V Low Signal Loss/System Error High Quality, Low Level Signal Amplification


Hearing Aids, Mini Microphones High-Gain/Low-Noise Amplifiers Low-Current/Low-Voltage Battery Powered Amplifiers Infrared Detector Amplifiers Ultra-High Input Impedance Pre-Amplifiers


The SSTD89A n-channel JFET features built-in self-biased diodes and is designed to provide low voltage, low noise and low cut-off voltage. It can be used with power supplies as low 1.2 V. The SSTD89A is ideal for use in low current amplifier, hearing aid and mini-microphone applications. The SSTD89A is available in the (SOT-353), 5-lead package.


Gate-Drain. ­15 V Gate-Source Voltage. ­15 V Gate Current. 10 mA Storage Temperature. to 150_C Operating Temperature. to 150_C Power Dissipationa 250 mW Notes a. Device mounted with all leads soldered or welded to PC board.

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: B, 23-Oct-00

Gate-Source Breakdown Voltage Gate-Source Cut-Off Voltage Saturation Current Operating Current Gate-Reverse Current Drain Cut-Off Currentb Diode Forward Transconductance Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS ID(op) IGSS ID(off) VF VGS(F) VGS 1 mA VDS 100 nA VDS 10 V, VGS 0 V See Figure 1 VGS 10 V, VDS 0 V VDS 15 V, VGS 1 mA VDS V mA

Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS 15 V, VGS = 1 MHz VDS 10 V, VGS = 1 MHz pF mS

Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.

1000 VGS D ­ Drain Current (mA) D ­ Drain Current (mA) 800 1000
Common Source Input Capacitance vs. Gate-Source Voltage
5.1 C rss ­ Reverse Feedback Capacitance (pF) VDS iss ­ Input Capacitance (pF) 4.1 VDS V 4.1
Common Source Reverse Feedback Capacitance vs. Gate-Source Voltage


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