Details, datasheet, quote on part number: SSTJ212
PartSSTJ212
Category
DescriptionHigh Frequency
CompanyVishay Intertechnology
DatasheetDownload SSTJ212 datasheet
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Features, Applications

FEATURES

D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV mA

Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification

APPLICATIONS
High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION

The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Series is available in tape-and-reel for automated assembly (see Packaging Information).

The TO-226AA (TO-92) plastic package, provides low cost while the TO-236 (SOT-23) package provides surface-mount

Gate-Drain, Gate-Source Voltage. 25 V Gate Current. 10 mA Lead Temperature (1/16" from case for 10 sec.). 300_C Storage Temperature. to 150_C Operating Junction Temperature. to 150_C Power Dissipationa. 350 mW Notes a. Derate 2.8 mW/_C above 25_C

Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currenta Drain Cutoff Current Gate-Source Forward Voltage

V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)

Common-Source Forward Transconductanceb Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS 15 V, VGS MHz VDS 15 V, VGS kHz VDS 15 V, VGS kHz 1.5 5 nV/ Hz NZF mS

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: v300 ms duty cycle v3%.

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage

50 IDSS @ VDS 10 V, VGS 0 V gfs @ VDS 10 V, VGS kHz 20 gfs Forward Transconductance (mS) 100 nA IG(on) IG Gate Leakage 1 nA IGSS 1 pA IGSS 10 mA

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

200 rDS(on) Drain-Source On-Resistance ( ) gos Output Conductance (mS) 160 200 gfs Forward Transconductance (mS) 10


 

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