Details, datasheet, quote on part number: SUM45N25-58
DescriptionN-channel 250-V (D-S) 175C MOSFET
CompanyVishay Intertechnology
DatasheetDownload SUM45N25-58 datasheet
Cross ref.Similar parts: PSMN057-200B, RCJ510N25TL
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Features, Applications

D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package
D Primary Side Switch D Plasma Display Panel Sustainer Function

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range = 125_C

Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: A, 14-Jul-03 Mount)c

Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS 250 mA VDS = VGS, 250 mA VDS 0 V, VGS "30 V VDS 200 V, VGS 0 V Zero Gate Voltage g Drain Current IDSS VDS 200 V, VGS = 125_C VDS 200 V, VGS = 175_C On-State Drain Currenta ID(on) VDS 5 V, VGS 10 V VGS 20 A Drain Source On-State Drain-Source On State Resistancea VGS = 125_C rDS(on) DS( ) VGS = 175_C VGS 15 A, Forward Transconductancea gfs VDS mA nA

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr Timec td(off) tf VDD 45 A, VGEN = 2.5 MHz VDS V, , VGS 45 A VGS 0 V, VDS = 1 MHz nC pF

Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec

Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr A, , di/dt = 100 A/ms 45 A, VGS A mC

Notes a. Pulse test; pulse width v 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.


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0-C     D-L     M-R     S-Z