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Part: TEKS6400FSZ
Category:
Description: CMOS Photodetector With Logic Output
Company: Vishay Intertechnology
Datasheet: Download TEKS6400FSZ datasheet File size : 525 kB
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TEKS6400
Vishay Semiconductors
CMOS Photodetector with Logic Output
Description
TEKS6400 is a high sensitive CMOS Photo Schmitt Trigger in a sideview plastic package with spherical lens. The integrated Daylight filter is spectrum matched to IR emitters ( = 950 nm). TSKS5400 is the compatible IR emitter for design of optical sensors (e.g. transmissive or reflective).
Features
D Very high photo sensitivity D Supply voltage range 2.5 V to 5.5 V D Low current consumption (45 µA) D Miniature plastic package with side view lens D Angle of half sensitivity = ± 30° D TTL and CMOS compatible D Open collector output D Output signal level: (active 'low') D Package compatible to TSKS5400
14 355
Order Instruction
Ordering Code TEKS6400FSZ Remarks 1.27 mm Pin distance (lead to lead), height of taping 27 mm
Absolute Maximum Ratings
Tamb = 25°C Parameter Supply voltage range Output current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature t x 5 s, 2 mm from body Test Conditions Symbol VS1/ VS2 IO PV Tj Tamb Tstg Tsd Value 0.3...5.5 20 50 100 40...+85 40...+100 260 Unit V mA mW °C °C °C °C
Handling Precautions Caution: ESD (electrostatic discharge) sensitive device. Permanent damage may occure on unconnected devices subject to high energy electrostatic fields.
Document Number 81571 Rev. 1, 24May02
www.vishay.com 1 (6)
TEKS6400
Vishay Semiconductors Basic Characteristics (Tamb = 25°C)
Tamb = 25°C Parameter Supply voltage Supply current Irradiance for threshold 'On' Hysteresis Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Output voltage RL = 270 , VS1 = VS2 = 5.5 V, Ee Eon, = 950 nm VS1 = VS2 = 5.5 V, IF = 0 VS1 = 5.5 V = 950 nm, VS1 = 5 V VS1 = 5 V Test Conditions Symbol VS1/ VS2 IS1 Eeon Eeoff/Eeon p 0.5 V OL 25 Min. 2.5 45 50 80 ±30 920 825 to 950 0.2 0.4 Typ. Max. 5.5 100 100 Unit V µA µW/cm 2 % ° nm nm V
High level output current
I OH
1
µA
Switching Characteristics
Parameter Propagation delay time ON Propagation delay time OFF Test Conditions VS1 = VS2 = 5 V, RL = 270 , Ee = 3 x Eeon, = 950 nm VS1 = VS2 = 5 V, RL = 270 , Ee = 3 x Eeon, = 950 nm Symbol tphl tplh Typ. 1.5 3.0 Unit µs µs
VS1 0 IF IS1
VS2 RL IO Channel I VO
16720
IF o Channel I tphl
50% tplh 90%
RG = 50W tp IRDiode = 0.01 T tp = 50 ms
Oscilloscope 50 W
16721
Channel II
RL y 1 MW CL x 20 pF
VO o Channel II 10%
Figure 1. Test circuit
Figure 2. Pulse diagram
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Document Number 81571 Rev. 1, 24May02
TEKS6400
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
E e on rel Relative Trigger Irradiation 125 PV Power Dissipation ( mW ) 100 75 50 25 0 0
16722
20 40 60 80 100 Tamb Ambient Temperature ( °C )
1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 45 30 15 0
VS1 = 5 V l = 950 nm
15 30 45 60 75 90
16725
Tamb Ambient Temperature ( °C )
Figure 3. Power Dissipation vs. Ambient Temperature
1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 45 30 15 0 15 30 45 60 75 90 Tamb Ambient Temperature ( °C )
Figure 6. Rel. Trigger Irradiation vs. Ambient Temperature
20 Output Propagation Delay ( s ) 18 16 14 12 10 8 6 4 2 0 0
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I Srel Relative Supply Current
tplh
tphl
5
10
15
20
25
30
16723
Input Overload, X Eeon
Figure 4. Rel. Supply Current vs. Ambient Temperature
0.30 V OL Output Voltage ( mV ) 0.28 0.26 0.24 0.22 0.20 0.18 0.16 VS1 = 5 V IS2 = 16 mA
Figure 7. Propagation Delay vs. Input Overload
0° 10° 20° 30°
S rel Relative Sensitivity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
0.14 45 30 15 0 15 30 45 60 75 90 16724 Tamb Ambient Temperature ( °C )
14353
Figure 5. Output Voltage vs. Ambient Temperature
Figure 8. Relative Radiant Sensitivity vs. Angular Displacement
Document Number 81571 Rev. 1, 24May02
www.vishay.com 3 (6)
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