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Part: TEKT5400SASZ
Category:
Description: Silicon NPN Phototransistor
Company: Vishay Intertechnology
Datasheet: Download TEKT5400SASZ datasheet File size : 525 kB
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Datasheet text preview:
TEKT5400S
Vishay Semiconductors
Silicon NPN Phototransistor
Description
TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case. The molded package itself is an IR filter, spectrum matched to IR emitters (p > 850nm or 950 nm).
Features
D High photo sensitivity D Daylight filter D Molded package with side view lens D Angle of half sensitivity = ± 37° D Matched with IREmitter TSKS5400S
16733
Applications
D Detector in electronic control and drive circuits
Order Instruction
Ordering Code TEKT5400S TEKT5400SASZ Remarks 2000 pcs in Plastic Bags 2.54 mm Pin distance (lead to lead), height of taping 16 mm
Absolute Maximum Ratings
Tamb = 25°C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Soldering Temperature Thermal Resistance Junction/Ambient tx5s tp/T = 0.5, tp x 10 ms Tamb x 40 °C Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tamb Tsd RthJA Value 70 7 100 200 150 100 40...+100 40...+85 260 400 Unit V V mA mA mW °C °C °C °C K/W
Document Number 81569 Rev. 1, 24May02
www.vishay.com 1 (7)
TEKT5400S
Vishay Semiconductors Basic Characteristics
Tamb = 25°C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage TurnOn Time TurnOff Time CutOff Frequency Ee = 1 = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 mW/cm2, Test Conditions IC = 1 mA IE = 100 µA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 ECE = 5 V, Ee = 1 p = 950 nm mW/cm2, Symbol VCEO VECO ICEO CCEO Ica p 0.5 VCEsat ton toff fc 6 5 110 2 Min. 70 7 1 6 4 ±37 920 850...980 0.3 100 Typ. Max. Unit V V nA pF mA deg nm nm V µs µs kHz
www.vishay.com 2 (7)
Document Number 81569 Rev. 1, 24May02
TEKT5400S
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
200 Ptot Total Power Dissipation (mW) 180 160 140 120 100 80 60 40 20 0 0
16719
10 Ica Collector Light Current ( mA )
RthJA
TEKT5400S 1
0.1 VCE=5V l=950nm 0.01 0.01
10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( °C )
16707
0.1
1
10
Ee Irradiance ( mW/cm2 )
Figure 1. Total Power Dissipation vs. Ambient Temperature
104 ICEO Collector Dark Current ( nA ) Ica Collector Light Current ( mA )
Figure 4. Relative Radiant Intensity vs. Angular Displacement
10
103 VCE=10V 102
l=950nm
Ee=1mW/cm2 0.5mW/cm2
1 0.2mW/cm2 0.1mW/cm2 0.1
101
100 20
94 8249
40
60
80
100
16718
0.1
1
10
100
Tamb Ambient Temperature ( °C )
VCE Collector Emitter Voltage ( V )
Figure 2. Collector Dark Current vs. Ambient Temperature
Figure 5. Collector Light Current vs. Collector Emitter Voltage
CCEO Collector Emitter Capacitance ( pF ) 20 16 f=1MHz
2.0 Ica rel Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0
94 8239
VCE=5V Ee=1mW/cm2 l=950nm
12
8
4 0 0.1 1 10 100 VCE Collector Emitter Voltage ( V )
20
40
60
80
100
94 8247
Tamb Ambient Temperature ( °C )
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage
Document Number 81569 Rev. 1, 24May02
www.vishay.com 3 (7)
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