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Details, datasheet, quote on part number:TSFF5200
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Datasheet text preview:
TSFF5200
Vishay Semiconductors
High Speed IR Emitting Diode in ø5 mm (T1¾) Package
Description
TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.
94 8390
Features
D D D D D D D D D
High modulation bandwidth (35 MHz) Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation Standard T1¾ (ø 5 mm) package Angle of half intensity = ± 10° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors
Applications
IInfrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 300 1 250 100 25...+85 25...+85 260 300 Unit V mA mA A mW °C °C °C °C K/W
tp/T = 0.5, tp = 100 ms tp = 100 ms
t
x 5sec, 2 mm from case
Document Number 81060 Rev. 2, 29-Jun-99
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TSFF5200
Vishay Semiconductors Basic Characteristics
Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time CutOff Frequency Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Symbol VF VF TKVF IR Cj Ie Ie TKfe Min Typ 1.45 2.5 2.4 160 160 1600 40 0.5 ±10 870 40 0.2 10 10 35 Max 1.6 3.0 10 80 800 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz
fe
TKlp tr tf fc
lp Dl
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 PV Power Dissipation ( mW ) 200 IF Forward Current ( mA ) 250 200
150 RthJA 100
150 100 RthJA 50 0
50 0 0 20 40 60 80 100
0
16112
20
40
60
80
100
16111
Tamb Ambient Temperature ( °C )
Tamb Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81060 Rev. 2, 29-Jun-99
TSFF5200
Vishay Semiconductors
1000 I F Forward Current ( A ) tp / T = 0.01 0.02 0.05 0.1 Tamb < 50° 1000.0 I e Radiant Intensity ( mW/sr )
100.0
10.0
0.2 0.5 100 0.01
1.0
0.1 0.10 1.00 10.00 100.00
16032
1
10
100
1000
16031
tp Pulse Duration ( ms )
IF Forward Current ( mA )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
1000.0
1000.0 I F Forward Current ( mA )
Fe Radiant Power ( mW )
100.0
100.0
10.0
10.0
1.0
1.0
0.1 0
16030
0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
16033
1
10
100
1000
VF Forward Voltage ( V )
IF Forward Current ( mA )
Figure 4. Forward Current vs. Forward Voltage
1.2 V Frel Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9 VFrel Relative Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 20 40 60 80 100
16034
IF = 20 mA
0.8 0.7
0
10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( °C )
94 7990 e
Tamb Ambient Temperature ( °C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Document Number 81060 Rev. 2, 29-Jun-99
www.vishay.com 3 (6)
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