|
Details, datasheet, quote on part number:TSFF5210
| |
| Part: | TSFF5210 |
| Category: | Optoelectronics => Display => Infrared Emitters |
| Description: | High Speed Infrared Emitting Diode, 870 Nm, Gaalas Double Hetero |
| Company: | Vishay Intertechnology |
| Datasheet: | Download TSFF5210 datasheet File size : 134 kB |
| Request For quote: | Find where to buy TSFF5210
|
| |
Datasheet text preview:
VISHAY
TSFF5210
Vishay Semiconductors
High Speed IR Emitting Diode in 5 mm (T-1¾) Package
Description
TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm.
Features
· High modulation bandwidth (23 MHz) · Extra high radiant power and radiant intensity · Low forward voltage · · · · · · · Suitable for high pulse current operation Standard T-1¾ ( 5 mm) package Angle of half intensity = ± 10° Peak wavelength p = 870 nm High reliability Good spectral matching to Si photodetectors Lead-free device
94 8390
Applications
Infrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Ther mal Resistance Junction/ A mb i e n t t 5 sec, 2 mm from case tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Sym bol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 250 100 - 25 to + 85 - 25 to + 85 260 300 Unit V mA mA A mW °C °C °C °C K/ W
Document Number 81090 Rev. 1.4, 23-Jun-04
www.vishay.com 1
TSFF5210
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Sym bol VF VF T KV F IR Cj 125 M in Typ. 1.5 2.3 - 2.1 10 Max 1. 8 3. 0
VISHAY
Unit V V m V/ K µA pF
Optical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Cut-Off Frequency Vir tual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA Sym bol Ie Ie e TKe p TK p tr tf fc M in 90 Typ. 180 1800 50 - 0.35 ± 10 870 40 0. 25 15 15 23 3.7 Max 450 Unit mW/sr mW/sr mW %/ K deg nm nm nm/K ns ns M Hz mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
300
PV Power Dissipation (mW) I FForward Current ( mA )
200 175 150 125 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( °C )
16964
250 200 RthJA 150 100 50 0
RthJA
0
10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( C )
16647
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com 2
Document Number 81090 Rev. 1.4, 23-Jun-04
VISHAY
TSFF5210
Vishay Semiconductors
1.25
1000
I F -Forward Current ( mA )
t p/ T= 0.01 0.02
Tamb < 50° 0.05 0.1
e, rel - Relative Radiant Power
1.0
0.75 0.5
0.2 0.5
0.25 0 780
100 0.01
16031
0.1
1.0
10
100
95 9886
880 Wavelength ( nm )
980
tp - Pulse Duration ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Relative Radiant Power vs. Wavelength
0°
1000
I F - Forward Current ( mA ) Ie rel Relative Radiant Intensity
10 °
20 °
30°
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
100 t p = 100 µs t p / T = 0.001
10
1 0
18873
1
2
3
4
15989
0.6
0.4
0.2
0
0.2
0.4
0.6
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Radiant Intensity vs. Angular Displacement
I e - Radiant Intensity ( mW/sr )
1000
e, I e -Attenuation (dB)
1 0 -1 -2 -3 -4 -5 1 10 100 1000
14256
100
10
1
IFDC = 70mA IFAC = 30mA pp
0.1
16032
10
100
1000
10000
100000
I F - Forward Current ( mA )
f - Frequency ( kHz )
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Attenuation vs. Frequency
Document Number 81090 Rev. 1.4, 23-Jun-04
www.vishay.com 3
|
|
