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Details, datasheet, quote on part number:TSFF5400
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Datasheet text preview:
VISHAY
TSFF5400
Vishay Semiconductors
High Speed IR Emitting Diode in 5 mm (T-1¾) Package
Description
TSFF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.
94 8390
Features
· High modulation bandwidth (35 MHz) · Extra high radiant power and radiant intensity · Low forward voltage · · · · · · Suitable for high pulse current operation Standard T-1¾ ( 5 mm) package Angle of half intensity = ± 22° Peak wavelength p = 870 nm High reliability Good spectral matching to Si photodetectors
Applications
Infrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Ther mal Resistance Junction/Ambient t 5sec, 2 mm from case tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition S ym b o l VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 300 1 250 100 - 25 to + 85 - 25 to + 85 260 300 Unit V mA mA A mW °C °C °C °C K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Sym bol VF VF TKVF IR Cj 160 M in Typ. 1.45 2. 5 -2. 4 10 Max 1. 6 3. 0 Unit V V mV/K µA pF
Document Number 81016 Rev. 6, 10-Jul-03
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TSFF5400
Vishay Semiconductors Optical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Radiant Intensity Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Cut-Off Frequency IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA Sym bol Ie Ie e TKe p TKp tr tf fc M in 35 350 Typ. 60 600 40 -0. 5 ±22 870 40 0.2 10 10 35 Max
VISHAY
Unit mW/sr mW/sr mW %/K deg nm nm nm/K ns ns M Hz
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
- Power Dissipation ( mW )
I F -Forward Current ( mA )
200 150 R thJA 100 50 0
1000
t p/ T= 0.01 0.02
Tamb < 50° 0.05 0.1
0.2 0.5
P V
0
20
40
60
80
100
16031
100 0.01
0.1
1.0
10
100
94 7957 e
Tamb - Ambient Temperature ( °C )
tp - Pulse Duration ( ms )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
250
IF - Forward Current ( mA )
1000
200
IF - Forward Current ( mA )
150 100 R thJA 50 0
100
10
1
0.1
0
20
40
60
80
100
16030
0
94 8879
Tamb - Ambient Temperature ( °C )
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V F - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
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Document Number 81016 Rev. 6, 10-Jul-03
VISHAY
TSFF5400
Vishay Semiconductors
1.2
V Frel - Relative Forward Voltage
1.4
1.1 I F = 10 mA
I e rel ; e rel
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4
16034
I F = 20 mA
1.0 0.9
0.8 0.7 0 20 40 60 80 100
0
10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C )
94 7990 e
T amb - Ambient Temperature ( ° C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1000.0
I e - Radiant Intensity ( mW/sr ) e, rel - Relative Radiant Power
1.0
100.0
0.75 0.5
10.0
1.0
0.25 0 780
0.1
18220
1
10
100
1000
95 9886
880 Wavelength ( nm )
980
I F - Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
1000
e - Radiant Power ( mW ) I e rel - Relative Radiant Intensity
10 °
20°
30 °
100
40 ° 1.0 0.9 0.8 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 0.6
10
1
0.1 1
16033
10
100
1000
94 8883
I F - Forward Current ( mA )
Figure 7. Radiant Power vs. Forward Current
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Document Number 81016 Rev. 6, 10-Jul-03
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