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Details, datasheet, quote on part number:VN2406L
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Datasheet text preview:
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L VN2406D VN2406L VN2410L VN2410LS 240
V(BR)DSS Min (V)
rDS(on) Max (W)
10 @ VGS = 4.5 V 6 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8 0.8 to 2 0.8 to 2 0.8 to 2 0.8 to 2
ID (A)
0.18 1.12 0.18 0.18 0.19
6 @ VGS = 10 V
10 @ VGS = 10 V 10 @ VGS = 10 V
FEATURES
D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability
BENEFITS
D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away"
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control
'Device Marking Front View
TO-226AA
(TO-92) S G D 1
TN2410L
"S" TN 2410L xxyy
TO-220AB
(Tab Drain) 1 'Device Marking Front View S G D
TO-92S
(Copper Lead Frame) 1 'Device Marking Front View
2
VN2406L
"S" VN 2406L xxyy
G D S
VN2406D
2 VN2406D "S" xxyy 3 Top View VN2406D "S" = Siliconix Logo xxyy = Date Code 2
VN2410LS
"S" VN 2410LS xxyy "S" = Siliconix Logo xxyy = Date Code Top View VN2410LS
3 Top View TN2410L VN2406L VN2410L
VN2410L
"S" VN 2410L xxyy "S" = Siliconix Logo xxyy = Date Code
3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS V GS ID IDM PD RthJA TJ, Tstg
TN2410L
240 "20 0.18 0.11 1 0.8 0.32 156
VN2406Db
240 "20 1.12 0.7 3 20 8 6.25c
VN2406L
240 "20 0.18 0.11 1.7 0.8 0.32 156 55 to 150
VN2410L
240 "20 0.18 0.11 1.7 0.8 0.32 156
VN2410LS
240 "20 0.19 0.12 2 0.9 0.4 139
Unit
V
A
W _C/W _C
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range
Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case Document Number: 70204 S-04279--Rev. F, 16-Jul-01 www.vishay.com
11-1
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN2410L VN2406D/L VN2410L/LS
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V
260 1.4
240 0.5 1.8
240 0.8 2 "100 "500 "10
240 0.8 2 "100 "500 nA V
Gate-Body Leakage
IGSS
TJ = 125_C VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 125_C 0.01 1
1 100 10 500 10 500 A 10 mA
Zero Gate Voltage Drain Current
IDSS
VDS = 120 V, VGS = 0 V TJ = 125_C
On-State Drain Currentb
VDS = 10 V, VGS = 4.5 V ID(on) VDS = 15 V, VGS = 10 V VGS = 2.5 V, ID = 0.1 A VGS = 3.5 V, ID = 0.05 A
0.8 1.5 7.5 4.5 4 7.5 3.5 6.5 500 530 115
0.25 1 10 15 10 20 6 14.8 100 300 135 50 20 135 50 20 300 135 50 20 pF mS 10 24.7 W 1
Drain-Source On-Resistanceb
VGS = 4.5 V, ID = 0.2 A rDS(on) TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C
Forward Transconductanceb Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 10 V, ID = 0.2 A gfs Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz VDS = 10 V, ID = 0.5 A
30 5
Switchingc
tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v 2%. c. Switching time is essentially independent of operating temperature. VDD = 60 V, RL = 150 W ID ^ 0.4 A, VGEN = 10 V RG = 25 W 5 3 2 26 20 6 60 23 34 23 34 VNDB24 35 8 8 8 8 ns
www.vishay.com
11-2
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0 VGS = 10 V 4.0 V ID Drain Current (mA) 200
Output Characteristics for Low Gate Drive
VGS = 3 V 2.6 V
0.8 ID Drain Current (A)
160 2.4 V 120 2.2 V 80 2.0 V 40
0.6
3.5 V
0.4
3.0 V 2.5 V
0.2 2.0 V 0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)
1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS Drain-to-Source Voltage (V)
Transfer Characteristics
0.5 VDS = 15 V 0.4 TJ = 55_C ID Drain Current (A) 0.3 25_C 125_C 10 rDS(on) On-Resistance ( ) 12
On-Resistance vs. Gate-to-Source Voltage
8
6 1.0 A 4 I D = 0.1 A 2 0.5 A
0.2
0.1
0 0 1 2 3 4 5 VGS Gate-Source Voltage (V)
0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
6 VGS = 10 V rDS(on) Drain-Source On-Resistance ( ) 5 rDS(on) Drain-Source On-Resistance ( ) (Normalized) 2.25
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 ID = 0.5 A
4
3
2
1
0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID Drain Current (A)
50
10
30
70
110
150
TJ Junction Temperature (_C) www.vishay.com
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
11-3
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