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Details, datasheet, quote on part number:VQ1001P
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Datasheet text preview:
VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VQ1001J VQ1001P
V(BR)DSS Min (V)
30
rDS(on) Max (W)
1 @ VGS = 12 V 1 @ VGS = 12 V
VGS(th) (V)
0.8 to 2.5 0.8 to 2.5
ID (A)
0.83 0.53
FEATURES
D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
Dual-In-Line
D1 N S1 G1 NC G2 N S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ1001P "S" fllxxyy N Device Marking Top View VQ1001J "S" fllxxyy
Top View Plastic: VQ1001J Sidebraze: VQ1001P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage VQ1001J VQ1001P Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation (Single) Thermal Resistance, Junction-to-Ambient (Single) Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70219 S-04279--Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C ID IDM PD RthJA TJ, Tstg
Symbol
VDS V GS
Single
30 "30 "20 0.83 0.53 3 1.3 0.52 96
Total Quad
Unit
V
A
2 0.8 62.5 55 to 150 W _C/W _C
11-1
VQ1001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "16 V TJ = 125_C VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 10 V, VGS = 12 V VGS = 5 V, ID = 0.2 A Drain-Source On-Resistanceb rDS(on) VGS = 12 V, ID = 1 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 200 2 3.5 1.2 0.8 1.5 500 1.75 1 2 mS W 30 0.8 45 1.5 2.5 "100 "500 10 500 mA A nA V
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 38 33 8 110 110 35 pF
Switchingc
Turn-On Time Turn-Off Time tON tOFF VDD = 15 V, RL = 23 W, ID ^ 0.6 A VGEN = 10 V, RG = 25 W 9 14 30 ns 30 VNDQ03
Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70219 S-04279--Rev. D, 16-Jul-01
VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0 VGS = 10 V 7V 6V
Output Characteristics for Low Gate Drive
200 VGS = 10 V 160 ID Drain Current (mA) 2.7 V 120 2.5 V 80 2.3 V 40 2.9 V
1.6 ID Drain Current (A)
1.2
5V
0.8
4V
0.4
3V 2V
2.1 V 1.7 V
0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)
0 0 0.4 0.8 1.2 1.6 2.0 VDS Drain-to-Source Voltage (V)
Transfer Characteristics
500 3 rDS(on) On-Resistance ( )
On-Resistance vs. Gate-to-Source Voltage
400 ID Drain Current (mA)
VDS = 15 V
ID = 0.2 A
0.5 A 2
300
200
1
1.0 A
100
TJ = 125_C 25_C
55_C 0 3 4 5 0 4 8 12 16 20
0 0 1 2 VGS Gate-Source Voltage (V)
VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5 rDS(on) Drain-Source On-Resistance ( ) rDS(on) Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75
Normalized On-Resistance vs. Junction Temperature
2.0 VGS = 4.5 V 1.5 6V
VGS = 10 V ID = 0.5 A
1.50 0.1 A 1.25 1.00 0.75
10 V 1.0
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0.50 50 10 30 70 110 150 ID Drain Current (A) TJ Junction Temperature (_C)
Document Number: 70219 S-04279--Rev. D, 16-Jul-01
www.vishay.com
11-3
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