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Part: VQ1006P
Category:
Description: Enhancement-mode MOSFET Transistors
Company: Vishay Intertechnology
Datasheet: Download VQ1006P datasheet File size : 1040 kB
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Datasheet text preview:
VN0808L/LS, VQ1006P
Vishay Siliconix
N-Channel 80- and 90-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN0808L VN0808LS VQ1006P 80 90
V(BR)DSS Min (V)
rDS(on) Max (W)
4 @ VGS = 10 V 4 @ VGS = 10 V 4 @ VGS = 10 V
VGS(th) (V)
0.8 to 2 0.8 to 2 0.8 to 2.5
ID (A)
0.3 0.33 0.4
FEATURES
D D D D D Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage
TO-226AA
(TO-92)
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
TO-92S
S 1
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
Dual-In-Line D1 N S1 G1 NC D4 S4 G4 NC G3 S3 D3 N N
1 2 3 4 5 6 7
14 13 12 11 10 9 8
S
1 G 2
G
2 D 3 N
D
3 Top View Top View VN0808L VN0808LS
G2 S2 D2
Front View:
VN0808LS
"S" VN 0808LS xxyy "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Sidebraze: VQ1006P
Front View:
VN0808L
"S" VN 0808L xxyy
Top View:
VQ1006P
VQ1006P "S"f//xxyy
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
VQ1006P Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70214 S-04279--Rev.D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS V GS ID IDM PD RthJA TJ, Tstg
VN0808L
80 "30 0.3 0.19 1.9 0.8 0.32 156
VN0808LS
80 "30 0.33 0.21 1.9 0.9 0.4 139
Single
90 "20 0.4 0.23 2 1.3 0.52 96
Total Quad
Unit
V
A
2 0.8 62.5 W _C/W _C
55 to 150
11-1
VN0808L/LS, VQ1006P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN0808L/LS VQ1006P
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th) IGSS
VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V TJ = 125_C VDS = 80 V, VGS = 0 V TJ = 125_C
125 1.6
80 0.8 2 "100
90 V 0.8 2.5 "100 "500 10 500 1 500 mA nA
Zero Gate Voltage Drain Current
IDSS
VDS = 72 V, VGS = 0 V TJ = 125_C
On-State Drain Currentb
ID(on)
VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.3 A
1.8 3.8 3.6 6.7 350 0.23
1.5
1.5 5 4 8 4.5 8.6 170
A
Drain-Source On-Resistanceb
rDS(on)
VGS = 10 V, ID = 1 A TJ = 125_C
W
Forward
Transconductanceb
gfs gos
VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A
170
Common Source Output Conductanceb
mS
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 15 2 50 40 10 60 50 10 pF
Switchingc
Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 6 8 10 10 10 ns 10 VNDQ09
Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70214 S-04279--Rev.D, 16-Jul-01
VN0808L/LS, VQ1006P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0 VGS = 10 V 6V 0.8 ID Drain Current (mA) 5V 0.6 ID Drain Current (mA) 60 80 100
Output Characteristics for Low Gate Drive
VG S = 3 V 2.8 V 2.6 V
4V
2.4 V
0.4 3V 0.2 2V 0 0 1.0 2.0 3.0 4.0 5.0 VDS Drain-to-Source Voltage (V)
40 2.2 V 20
2.0 V 1.8 V
0 0 0.4 0.8 1.2 1.6 2.0 VDS Drain-to-Source Voltage (V)
Transfer Characteristics
0.5 TJ = 55_C 0.4 ID Drain Current (A) 125_C 6 rDS(on) On-Resistance ( ) 25_C 5 4 3 2 1 0 0 2 4 6 8 10 VGS Gate-Source Voltage (V) 0 0 7
On-Resistance vs. Gate-to-Source Voltage
0.3
ID = 0.1 A
0.5 A
1.0 A
0.2 VDS = 15 V 0.1
4
8
12
16
20
VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
10 rDS(on) Drain-Source On-Resistance ( ) rDS(on) Drain-Source On-Resistance ( ) (Normalized) 2.25
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50
8
6 VGS = 10 V 4
2
0 0 0.5 1.0 1.5 2.0 2.5
50
10
30
70
110
150
ID Drain Current (A)
TJ Junction Temperature (_C)
Document Number: 70214 S-04279--Rev.D, 16-Jul-01
www.vishay.com
11-3
Others parts begin by vq
VQ-1
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