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Details, datasheet, quote on part number:VQ2001P
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Datasheet text preview:
VP0300L/LS, VQ2001J/P
Vishay Siliconix
P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VP0300L VP0300LS VQ2001J VQ2001P 30
V(BR)DSS Min (V)
rDS(on) Max (W)
2.5 @ VGS = 12 V 2.5 @ VGS = 12 V 2 @ VGS = 12 V 2 @ VGS = 12 V
VGS(th) (V)
2 to 4.5 2 to 4.5 2 to 4.5 2 to 4.5
ID (A)
0.32 0.5 0.6 0.6
FEATURES
D D D D D High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: 3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF
TO-226AA (TO-92)
1
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
Dual-In-Line
D1 P S1 G1 1 2 3 4 5 6 7 14 D4 13 S4 12 G4 11 NC 10 G3 9 8 Top View Plastic: VQ2001J Sidebraze: VQ2001P S3 D3 P P
TO-92S (Copper Lead Frame)
S 1
S
G
2
G
2
NC G2
D
3
D
3
P
S2 D2
Top View VP0300L
Top View VP0300LS For device marking, see the last page of this data sheet.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
VQ2001J/P Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS V GS ID IDM PD RthJA TJ, Tstg
VP0300L
30 "20 0.32 0.2 2.4 0.8 0.32 156
VP0300LS
30 "20 0.5 0.32 3 0.9 0.4 139 55 to 150
Single
30 "20 0.6 0.37 2 1.3 0.52 96
Total Quad
30 "20 0.6 0.37 2 2 0.8 62.5
Unit
V
A
W _C/W _C
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range
Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70217 S-04279--Rev. E, 16-Jul-01 www.vishay.com
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VP0300L/LS, VQ2001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VP0300L/LS VQ2001J/P
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "16 V
55 3.1
30 2 4.5
30 2 4.5 "100 "500 "100 10 500 500 10 mA nA V
Gate-Body Leakage
IGSS
TJ = 125_C VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
TJ = 125_C VDS = 30 V, VGS = 0 V
On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb
ID(on) rDS(on) gfs gos
VDS = 10 V, VGS = 12 V VGS = 12 V, ID = 1 A TJ = 125_C VDS = 10 V, ID = 0.5 A VDS = 7.5 V, ID = 0.05 A
2.8 1.5 2.6 370 0.25
1.5 2.5 3.6
1.5 2 3.6
A W
200
200
mS
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 15 V, VGS = 0 V f = 1 MHz 60 40 10
150 100 60
150 100 60
pF
Switchingc
Turn-On Time Turn-Off Time Turn-On Time Turn-Off Time tON tOFF tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W VDD =15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V RG = 25 W 19 17 19 16 30 30 ns 30 30 VPEA03
Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70217 S-04279--Rev. E, 16-Jul-01
VP0300L/LS, VQ2001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
2.0 VGS = 10 V 1.6 ID Drain Current (A) 9 V 1000
Transfer Characteristics
125_C 8 V ID Drain Current (mA) 800 TJ = 55_C 25_C
1.2
7 V
600
0.8
6 V
400
0.4
5 V 4 V
200
0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)
0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)
Capacitance
175 150 125 100 75 50 25 0 0 5 10 15 20 25 30 VDS Drain-to-Source Voltage (V) Crss Coss VG S = 0 V f = 1 MHz VGS Gate-to-Source Voltage (V) 18
Gate Charge
15 VDS = 15 V ID = 1 A VDS = 24 V ID = 1 A
C Capacitance (pF)
12
9
Ciss
6
3
0 0 1000 2000 3000 4000 5000
Qg Total Gate Charge (pC)
On-Resistance vs. Junction Temperature
1.65 10 K
Source-Drain Diode Forward Voltage
TJ = 150_C 1 K TJ = 25_C IS Source Current (A) 150
1.50 rDS(on) On-Resistance ( ) (Normalized) VGS = 4.5 V ID = 0.5 A
1.35
1.20
VGS = 10 V ID = 0.1 A
100
1.05
10
0.90
0.75 50
1 25 0 25 50 75 100 125 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TJ Junction Temperature (_C)
VSD Source-to-Drain Voltage (V) www.vishay.com
Document Number: 70217 S-04279--Rev. E, 16-Jul-01
11-3
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