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Details, datasheet, quote on part number:VQ2004J
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VQ2004J
Vishay Siliconix
Quad P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V)
60
rDS(on) Max (W)
5 @ VGS = 10 V
VGS(th) (V)
2 to 4.5
ID (A)
0.41
FEATURES
D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: 3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
Dual-In-Line
D1 P S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 P P Device Marking Top View VQ2004J "S" fllxxyy "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code
Top View Plastic: VQ2004J
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70220 S-04279--Rev. C, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS V GS ID IDM PD RthJA TJ, Tstg
Single
60 "30 0.41 0.23 3 1.3 0.52 96
Total Quad
Unit
V
A
2 0.8 62.5 55 to 150 W _C/W _C
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VQ2004J
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Common Source Output Conductanceb IDSS ID(on) rDS(on) gfs gos VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 10 V, VGS = 10 V VGS = 10 V, ID = 1 A TJ = 125_C VDS = 10 V, ID = 0.5 A VDS = 7.5 V, ID = 0.1 A 200 1 2 2.5 4.4 325 0.45 mS 5 8 W VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "30 V TJ = 125_C 60 2 110 3.4 4.5 "100 "500 10 500 mA A nA V
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz 75 40 18 150 60 25 pF
Switchingc
td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. 11 15 40 ns 20 20 30 30 VPDV10
Turn-Off Time
VDD = 25 V, RL = 47 W ID ^ 0.5 A, VGEN = 10 V RG = 25 W
30
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11-2
Document Number: 70220 S-04279--Rev. C, 16-Jul-01
VQ2004J
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0 VGS = 10 V 1.6 ID Drain Current (A) 9 V 8 V ID Drain Current (mA) 16 20 VGS = 4.0 V
Output Characteristics for Low Gate Drive
1.2
12
3.8 V
7 V 0.8 6 V 0.4 5 V 4 V 0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)
8 3.6 V 4 3.4 V 3.2 V
0 0 0.4 0.8 1.2 1.6 2.0 VDS Drain-to-Source Voltage (V)
Transfer Characteristics
0.5 TJ = 55_C rDS(on) On-Resistance ( ) 0.4 ID Drain Current (A) VDS = 10 V 0.3 25_C 125_C 6 7
On-Resistance vs. Gate-to-Source Voltage
I D = 0.1 A 5 4 3 2 1 0.5 A 1.0 A
0.2
0.1
0 0 2 4 6 8 10 VGS Gate-Source Voltage (V)
0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
10 rDS(on) Drain-Source On-Resistance ( ) (Normalized) rDS(on) Drain-Source On-Resistance ( ) 2.00
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.5 A
8
1.75
1.50
6
1.25
4
VGS = 10 V
1.00
2
0.75
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0.50 50 10 30 70 110 150 ID Drain Current (A) TJ Junction Temperature (_C)
Document Number: 70220 S-04279--Rev. C, 16-Jul-01
www.vishay.com
11-3
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