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Details, datasheet, quote on part number:VQ3001J
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VQ3001J/P
Vishay Siliconix
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
V(BR)DSS Min (V)
N-Channel P-Channel 30 30
rDS(on) Max (W)
1 @ VGS = 12 V 2 @ VGS = 12 V
VGS(th) (V)
0.8 to 2.5 2 to 4.5
ID (A)
0.85 0.6
FEATURES
D D D D D Low On-Resistance: 0.8/1.6 W Low Threshold: 1.5/3.1 V Low Input Capacitance: 38/60 pF Fast Switching Speed: 9/16 ns Low Input and Output Leakage
BENEFITS
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
Dual-In-Line
D1 N S1 G1 NC G2 P S2 D2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 D4 S4 G4 NC G3 S3 D3 N "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code P Device Marking Top View VQ3001J "S" fllxxyy VQ3001P "S" fllxxyy
Top View Plastic: VQ3001J Sidebraze: VQ3001P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Parameter
Drain-Source Voltage VQ3001J Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70221 S-04279--Rev. D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C VQ3001P TA= 25_C TA= 100_C V GS ID IDM PD RthJA TJ, Tstg
Symbol
VDS
N-Channel
30 "20 "20 0.85 0.52 3 1.3 0.52 96.2 55 to 150
P-Channel
30 "20 "20 0.6 0.37 2 1.3 0.52 96.2
Total Quad
Unit
V
A
2 0.8 62.5 55 to 150 W _C/W _C
11-1
VQ3001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits N-Channel Parameter Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage V(BR)DSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VGS(th) VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 24 V, VGS = 0 V Zero-Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 12 V ID(on) VDS = 10 V, VGS = 12 V VGS = 5 V, ID = 0.2 A VGS = 12 V, ID = 1 A Drain-Source On-State Resistanceb rDS(on) VGS = 12 V, ID = 1 A VGS = 12 V, ID = 1 A, TJ = 125_C VGS = 12 V, ID = 1 A, TJ = 125_C Forward Transconductanceb VDS = 10 V, ID = 0.5 A gfs VDS = 10 V, ID = 0.5 A 3 2 1.2 0.81 1.6 1.65 2.7 500 390 250 200 mS 2.0 4.0 1.75 1.0 2.0 W 2 1.5 A 500 500 55 55 1.5 3.1 "100 "500 10 10 mA 0.8 2.5 2 4.5 "100 "500 nA 30 30 V
P-Channel Min Max Unit
Symbol
Test Condition
Typa
Min
Max
Dynamic
38 Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss N-Channel Turn-On Time tON VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W P-Channel Turn-Off Time tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 60 33 45 8 15 9 19 14 16 30 30 30 30 ns 35 60 110 100 pF 110 150
Output Capacitance
Coss
Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%.
VNDQ03/VPEA03
www.vishay.com
11-2
Document Number: 70221 S-04279--Rev. D, 16-Jul-01
VQ3001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0 VGS = 10 V 1.6 ID Drain Current (mA) ID Drain Current (A) 160 2.7 V 120 2.5 V 80 2.3 V 40 7V 200 6V 10 V 2.9 V
N-CHANNEL
Output Characteristics for Low Gate Drive
1.2
5V
0.8
4V
0.4
3V 2V
2.1 V 1.7 V
0 0 1 2 3 4 5 VDS Drain-to-Source Voltage (V)
0 0 0.4 0.8 1.2 1.6 2.0 VDS Drain-to-Source Voltage (V)
Transfer Characteristics
500 VDS = 15 V rDS(on) On-Resistance ( ) 400 ID Drain Current (mA) 3
On-Resistance vs. Gate-to-Source Voltage
ID = 0.2 A
300
0.5 A 2 1.0 A 1
200 TJ = 125_C 100 25_C 55_C 0 0 1 2 3 4 5
0 0 4 8 12 16 20
VGS Gate-Source Voltage (V)
VGS Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5 rDS(on) Drain-Source On-Resistance ( ) rDS(on) Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75 1.50
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V
2.0 VGS = 4.5 V 1.5 6V
ID = 0.5 A 0.1 A
1.0
1.25 1.00 0.75 0.50
10 V
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
50
10
30
70
110
150
ID Drain Current (A)
TJ Junction Temperature (_C)
Document Number: 70221 S-04279--Rev. D, 16-Jul-01
www.vishay.com
11-3
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