|Category||RF & Microwaves => Amplifiers|
|Datasheet||Download AH3WB-PCB datasheet
Product Features - 870 MHz +41 dBm Output IP3 No Matching Elements Required 3.0 dB Noise Figure 13 dB Gain +20 dBm P1dB MTBF >100 Years SOT-89 SMT Package Single Bias Supply (+5 V)
The is a high dynamic range amplifier for IF requirements. The product achieves low noise figure and high output IP3 at the same bias point, making it ideal for receiver and transmitter applications. In addition, the device is internally matched for 50 ohms in a low cost SOT-89 package. The AH3 is manufactured using GaAs MESFET technology and boasts an MTBF at a mounting temperature of 85°C. The package a SOT-89. All devices are 100% RF and DC tested.Specifications
Parameter Frequency Range S21 - Gain S11 - Input Return S22 - Output Return Loss Output IP3 Output P1dB Noise Figure1 Noise Figure Operating Current Range Supply Voltage Units MHz dB dBm mA V Minimum 50 12 Typical Maximum 870 14 Condition
Test conditions unless otherwise noted, = 25°C, Vdd V, 50 system, 800 MHz. 1. S11 and Noise Figure can be improved using an optional input matching network. 2. OIP3 measured with 2 tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate OIP3 using a 2:1 slope rule. 3. MTBF calculated with ground lead temperature at 85°C.
Parameter Operating Case Temperature Storage Temperature Supply Voltage Input RF Power (continuous) Rating V +10 dBm
Part No. AH3 AH3WB-PCB Description High Dynamic Range Amplifier (Available in tape and reel) - 870 MHz Fully Assembled Application CircuitOperation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: email@example.com Web site: www.wj.comPerformance Charts (Vds 5 V. Ids = 150 mA, = 22°C, unmatched device a 50 ohm system)
Frequency 50 MHz 450 MHz Magnitude 12.9 dB Magnitude -13.3 dB Magnitude OIP3 36 dBm 40 dBm Noise Figure 2.7 dB Bias Vds 150 mA
NOTE: The application circuit is designed for wide bandwidth. For narrow band applications, S11 and S21 can be improved with an input shunt microstrip element to ground.
Parameter Operating Case Temperature Thermal Resistance (Maximum) Junction Temperature (Recommended Maximum) Rating
Notes: 1. Thermal Resistance determined at Maximum Tab Temperature and Max Power Dissipation. 2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours. 3. Refer to WJ Application Note "AH3 Temperature Effects on Reliability" for more information.Specifications and information are subject to change without notice.
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