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Details, datasheet, quote on part number:FP1189-PCB900S
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FP1189
½-Watt HFET
The Communications Edge TM Product Information
Product Features
· · · · · · · 50 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package
Product Description
The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications' long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Functional Diagram
GND 4
1 RF IN
2 GND
3 RF OUT
Applications
· · · · · · Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless
Function Input / Gate Output / Drain Ground
Pin No. 1 3 2, 4
Specifications
DC Parameter
Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2) Thermal Resistance Junction Temperature (3)
Typical Performance
Units Min
mA mS V °C / W °C 220
Typ
290 155 -2.1
Max
360
Parameter (6)
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Channel Power (7)
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dB dBm V mA 915 20.6 -13 -6.0 +27.4 +39.9 2.7 +21
Typical
1960 15.7 -26 -9.6 +27.2 +40.4 3.7 +20.8 +8 125 2140 14.7 -24 -9.0 +27.2 +39.7 4.3 +18.4
68 160
RF Parameter (4)
Frequency Range Small Signal Gain SS Gain (50 , unmatched) Maximum Stable Gain Output P1dB Output IP3 (5) Noise Figure
1. 2. 3. 4.
Units Min
MHz dB dB dB dBm dBm dB 50 17
Typ
900 20.5 24 +27.4 +40 2.7
Max
4000 21
Drain Voltage Drain Current
6. Typical parameters represent performance in an application circuit. 7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Idss is measured with Vgs = 0 V, Vds = 3 V. Pinch-off voltage is measured when Ids = 1.2 mA. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Power RF Input Power (continuous) Drain to Gate Voltage, Vdg Junction Temperature -40 to +85 °C -55 to +125 °C 2.0 W 6 dB above Input P1dB +14 V +220° C
Ordering Information
Part No.
FP1189 FP1189-PCB900S FP1189-PCB1900S FP1189-PCB2140S
Rating
Description
½ -Watt HFET 870 960 MHz Application Circuit 1930 1990 MHz Application Circuit 2110 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice.
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com · Web site: www.wj.com
June 2003
FP1189
½-Watt HFET
The Communications Edge TM Product Information
Typical Device Data
S-Parameters (VDS = +8 V, IDS = 125 mA, T = 25°C, calibrated to device leads)
S 11
0.8
2. 0
S2 2
6 0.
0 3.
S21, MSG (dB)
10 5 0 0 1 2 3 4 Frequency (GHz) 5 6
DB(|S[2,1]|) DB(MSG)
2 -0.
.4 -0
.4 -0
.0 -2
-0.8
Swp Min 0 .0 5 GHz
-0.8
Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) 1.000 -4.52 10.313 176.55 0.002 87.44 0.544 0.988 -21.51 10.120 163.88 0.010 76.64 0.535 0.959 -42.21 9.681 148.45 0.020 64.73 0.520 0.933 -61.23 9.005 134.71 0.028 53.45 0.495 0.895 -78.75 8.270 122.08 0.035 44.25 0.469 0.860 -95.09 7.561 109.58 0.040 34.30 0.447 0.848 -109.61 7.028 99.15 0.044 26.69 0.428 0.821 -122.91 6.408 88.96 0.046 19.57 0.407 0.807 -135.32 5.950 79.64 0.048 13.93 0.400 0.796 -147.01 5.474 70.37 0.049 7.21 0.386 0.785 -157.00 5.087 62.43 0.050 2.99 0.374 0.780 -166.26 4.732 53.97 0.050 -1.58 0.376 0.775 -175.87 4.415 45.54 0.049 -6.79 0.369 0.766 175.78 4.082 38.18 0.049 -9.36 0.368 0.770 167.34 3.843 30.76 0.048 -12.48 0.372 0.771 159.87 3.602 23.91 0.050 -14.97 0.369 0.771 152.07 3.408 16.74 0.050 -17.53 0.374 0.771 145.63 3.241 9.15 0.048 -19.53 0.382 0.772 138.97 3.053 2.49 0.048 -21.27 0.387 0.770 132.07 2.876 -4.50 0.050 -23.00 0.396 0.780 126.56 2.743 -10.47 0.048 -25.08 0.408 0.794 120.21 2.622 -17.28 0.049 -26.64 0.412 0.795 114.22 2.507 -24.43 0.051 -30.44 0.423 0.794 108.27 2.346 -31.21 0.052 -30.16 0.442 0.798 102.86 2.237 -36.95 0.052 -31.18 0.446 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -3.02 -13.77 -27.13 -39.31 -50.54 -60.96 -70.64 -79.82 -88.93 -97.59 -105.24 -113.47 -121.84 -129.77 -137.25 -144.61 -152.17 -161.00 -168.31 -175.08 177.65 170.89 162.41 154.66 147.41
Specifications and information are subject to change without notice.
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com · Web site: www.wj.com
-1.0
-1.0
1
-0. 6
-0 .6
.0 -2
-3 .0
-3 .0
2
Swp Min 0 . 05 G Hz
-4 .0
2
1
June 2003
-5. 0
2 -0.
3
-10.0
-10.0
3
5 4
10.0
10.0
15
0.2 0
4
0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0 5.0
0
0.2
-4. 0 -5. 0
0.2
20
5
4.0
5.0
0. 4
0. 4
25
6
2. 0
30
0.6
0.8
S21, Maximum Stable Gain vs. Frequency
S wp Max 6 GH z
1.0
1.0
Swp Max 6 G Hz
0 3.
0 4.
5.0
6
10.0
FP1189
½-Watt HFET
The Communications Edge TM Product Information
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°C °
Application Circuit: 870 960 MHz (FP1189-PCB900S)
Frequency S21 Gain S11 Input Return Loss S22 Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
870 20.9 -10 -5.2 +27.5 2.7
915 20.6 -13 -6.0 +27.4 +39.9 2.7 +21
960 19.8 -10 -7.6 +27.5 2.6
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
-Vgg
CAP I D=C1 0 C=DN P pF CAP I D=C4 C=10 0 0 p F CAP I D= C 3 C= 6 8 p F RES I D=R 1 R=20 Ohm
V d s = 8 V @ 125 mA
CAP I D= C1 1 C=1 e 5 pF CAP I D=C 8 C=10 0 0 pF CAP I D= C 2 C=1 8 pF CAP I D=C 7 C=6 8 pF CAP I D=C 6 C=1 8 pF IN D I D= L 3 L = 4 7 nH
IN D I D= L 1 L =4 7 nH POR T P =1 Z=50 Ohm CAP I D= C 1 C=6 8 pF IN D I D= L 4 L = 1 2 nH RES I D= R 2 R=10 Ohm
S UB CK T I D= Q1 NE T=" FP 1 18 9"
2
RES I D= L 2 R=0 Ohm
CAP ID =C9 C=6 8 pF
POR T P =2 Z=50 Ohm
1
CAP I D= C1 3 C=3 . 9 pF
CAP I D= C1 2 C=DN P pF
CAP I D= C 5 C=DN P pF
Bill of Materials
Ref. Desig. C1, C3, C7, C9 C2, C6 C4, C8 C11 C13 L1, L3 L2 L4 R1 R2 Q1 C5, C12, C10 Value 68 pF 18 pF 1000 pF 0.1 µF 3.9 pF 47 nH 0 12 nH 10 20 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Chip resistor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice.
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com · Web site: www.wj.com
June 2003
FP1189
½-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP1189-PCB900S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 860 880 900 920 940 960 Frequency (MHz)
P1dB vs. Frequency -40c +25c +85c
22 21 S21 (dB) 20 19 18
-40c +25c +85c
0 -5 S22 (dB) -10 -15 -20 -25 -30 880 900 920 940 960 860 880 Frequency (MHz)
Noise Figure vs. Frequency -40c +25c +85c
17 860
900
920
940
960
Frequency (MHz)
ACPR vs. Channel Power -30 -40 -50 -60 -70 -40 C 16 17 18 19 20 +25 C 21 22 +85 C 23 24
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
30 28 P1dB (dBm) 26 24 22
-40c +25c +85c
6 5 NF (dB) 4 3 2 1 0 880 900 920 940 960 860 880 900 920 940 960 Frequency (MHz)
OIP3 vs. Temperature -40c +25c +85c ACPR (dBc)
freq = 915 MHz
20 860
Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm)
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
Output Channel Power (dBm) OIP3 vs. Output Power 45 40 35 30 25
fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C
42 40 OIP3 (dBm) 38 36 34 32 -40 -15 10 35 60 85 Tem erature (°C) p
Output Power / Gain vs. Input Power
22 20
frequency = 915 MHz, Temp = -40° C
-40
freq = 915, 916 MHz +12 dBm / tone
-60
IMD_Low IMD_High
-80 0 4 8 12 16 Output Power (dBm) 20 24
OIP3 (dBm)
0
4
8 12 16 Output Power (dBm)
20
24
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18
22 20
frequency = 915 MHz, Temp = +25° C
Output Power / Gain vs. Input Power 30 Output Power (dBm) 26 22 18
22 20
frequency = 915 MHz, Temp = +85° C
30 Output Power (dBm) 26
Gain (dB)
Gain (dB)
18 16 14 12 -12 -8 -4 0 4 Input Power (dBm ) 8 12
18 16 14 12 -12 -8 -4 0 4 Input Power (dBm ) 8 12
Gain (dB)
Gain
Gain
Gain 22 18 Output Power
-8 -4 0 4 Input Power (dBm ) 8 12
18 16 14 12 -12
Output Power
14 10
Output Power
14 10
14 10
Specifications and information are subject to change without notice.
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com · Web site: www.wj.com
June 2003
FP1189
½-Watt HFET
The Communications Edge TM Product Information
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 125 mA, 25°C °
Application Circuit: 1930 1990 MHz (FP1189-PCB1900S)
Frequency S21 Gain S11 Input Return Loss S22 Output Return Loss Output P1dB Output IP3
(+12 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
1930 15.8 -26 -9.2 +27.4
1960 15.7 -26 -9.6 +27.2 +40.4 3.7 +20.8
1990 15.5 -24 -9.0 +27.4
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
CAP CAP CAP ID= C4 ID= C3 ID= C10 C=33 pF C=D NP pF C= D NP pF -Vgg
Vd s = 8 V @ 125 mA CAP ID= C11 C=1e5 pF CAP ID =C12 C =D N P pF CAP ID=C8 C=D NP pF CAP ID=C7 C=D NP pF CAP ID=C6 C=33 pF IND ID=L3 L=22 nH
RES ID=R1 R=10 0 Ohm CAP ID=C13 C =D N P pF CAP ID=C2 C =D N P pF IND ID=L1 L=22 nH
SU BCK T ID= Q1 NET= "FP1 189 "
PORT P=1 Z=5 0 Ohm
CAP ID= C1 C=33 pF
2
IND ID= L2 L=2 .7 nH
CAP ID=C9 C=33 pF
PORT P=2 Z=5 0 Ohm
1
RES ID= R2 R=1 0 Ohm
CAP ID= C15 C= 1.8 pF
CAP ID= C13 C= D NP pF
CAP ID=C5 C=0.5 pF
Bill of Materials
Ref. Desig. C1, C4, C6, C9 C5 C11 C15 L1, L3 L2 R1 R2 Q1 C2, C3, C7, C8, C10, C12, C13, C14 Value 33 pF 0.5 pF 0.1 µF 1.8 pF 22 nH 2.7 nH 100 10 FP1189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 0.5W HFET Do Not Place Size 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice.
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com · Web site: www.wj.com
June 2003
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