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Details, datasheet, quote on part number:WE32K32-150
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| Part: | WE32K32-150 |
| Category: | Memory => ROM => EEPROM => EEPROM MCP |
| Description: | Organization = 32Kx32 ;; Speed (ns) = 80-150 ;; Volt = 5 ;; Package = 68 CQFP ;; Temp = C,i,m,q ;; |
| Company: | White Electronic Designs Corporation |
| Datasheet: | Download WE32K32-150 datasheet File size : 209 kB |
| Request For quote: | Find where to buy WE32K32-150
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Datasheet text preview:
White Electronic Designs
32Kx32 EEPROM MODULE, SMD 5962-94614
FEATURES
Access Times of 80*, 90, 120, 150ns MIL-STD-883 Compliant Devices Available Packaging: 68 lead, Hermetic CQFP (G2U), 122.4mm (0.880") square, 3.56mm (0.140") height (Package 510). 68 lead, Hermetic CQFP (G1U) 1, 23.9mm (0.940") square, 3.56mm (0.140") high (Pack age 519) 68 lead, Hermetic CQFP (G1T), 23.9mm (0.940") square, 4.06mm (0.160"), (Package 524) 66-pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400)
WE32K32-XXX
Data Retention at 25°C, 10 Years Write Endurance, 10,000 Cycles Organized as 32Kx32; User Configurable 64Kx16 or 128Kx8 Commercial, Industrial and Military Temperature Ranges Automatic Page Write Operation Page Write Cycle Time: 10ms Max Data Polling for End of Write Detection Hardware and Software Data Protection TTL Compatible Inputs and Outputs 5 Volt Power Supply Low Power CMOS, 10mA Standby Typical Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
* 80ns speed is not fully characterized and is subject to change or c a n c e l l a t i o n without notice. NOTE 1: Package not recommended for new design
FIG. 1 PIN CONFIGURATION FOR WE32K32N-XH1X
TOP VIEW
1 I/O8 I/O9 I/O10 A13 A14 NC NC NC I/O0 I/O1 I/O2 11 22 12 WE2 CS2 GND I/O11 A10 A11 A12 VCC CS1 NC I/O3 33 23 I/O15 I/O14 I/O13 I/O12 OE NC WE1 I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A6 A7 NC A8 A9 I/O16 I/O17 I/O18 44 34 VCC C S4 WE4 I/O27 A3 A4 A5 WE3 C S3 GND I/O19 55 45 I/O31 I/O30 I/O29 I/O28 A0 A1 A2 I/O23 I/O22 I/O21
32K x 8 32K x 8 OE A0-14 32K x 8 32K x 8 W E 1 CS 1
PIN DESCRIPTION
56
I/O0-31 Data Inputs/Outputs A0-14 WE1-4 CS1-4 OE VCC GND NC Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
BLOCK DIAGRAM
W E 2 CS 2 W E 3 CS 3 W E 4 CS 4
I/O20 66
8 8 8 8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
October 2002 Rev. 3
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WE32K32-XXX
FIG. 2 PIN CONFIGURATION FOR WE32K32-XG2UX, WE32K32-XG1UX1, AND WE32K32-XG1TX
TOP VIEW
NC A0 A1 A2 A3 A4 A5 C S3 GND C S4 WE1 A6 A7 A8 A9 A10 VCC
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs A0-14 Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31
WE1-4 CS1-4 OE VCC GND NC
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
OE C S2
NC
NC
NC
C S1
WE2
WE3
BLOCK DIAGRAM
W E 1 CS 1 OE A0-14 32K x 8 32K x 8 32K x 8 32K x 8 W E 2 CS 2 W E 3 CS 3 W E 4 CS 4
8
8
8
WE4
VCC
A11
A12
A13
A14
I/O0-7
I/O8-15
I/O16-23
NC NC
8
NC
I/O24-31
Note 1: Package not recommended for new design
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
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White Electronic Designs
A BSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Voltage on OE and A9 Symbol TA TSTG VG -55 to +125 -65 to +150 -0.6 to +6.25 -0.6 to +13.5 Unit °C °C V V CS H L L X X X OE X L H H X L WE X H L X H X
WE32K32-XXX
TRUTH TABLE
Mode Standby Read Write Out Disable Write Inhibit Data I/O High Z Data Out Data In High Z/Data Out
NOTE: S t r e s s e s above those listed under "Absolute Maximum Ratings" m a y cause permanent damage to the device. This is a stress r a t i n g only and functional operation of the device at these or any o t h e r conditions above those indicated in the operational sections o f this specification is not implied. Exposure to absolute maximum r a t i n g conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) Symbol VCC V IH VIL TA TA Min 4.5 2.0 -0.5 -55 -40 Max 5.5 V C C + 0.3 +0.8 +125 +85 Unit V V V °C °C Parameter Address Input Capacitance OE Capacitance CS1-4 Capacitance WE1-4 Capacitance Data I/O Capacitance
CAPACITANCE (TA = 25° C)
Symbol C AD COE CCS C WE CI/O Condition V I N = 0V, f = 1.0MHz V I N = 0V, f = 1.0MHz V I N = 0V, f = 1.0MHz V I N = 0V, f = 1.0MHz Max Unit 50 20 20 20 pF pF pF pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter Input Leakage Current Output Leakage Current Standby Current Output Low Voltage Output High Voltage Symbol ILI Conditions VCC = 5.5, VIN = GND to VCC Min -80 Max 10 10 320 2.5 0.45 2.4 2.4 -90 Min Max 10 10 250 2.5 0.45 2.4 -120 Min Max 10 10 200 2.5 0.45 2.4 -150 Min Max 10 10 150 2.5 0.45 Units µA µA mA mA V V
ILO x 32 CS = VIH, OE = VIH, VOUT = GND to VCC ISB VOL VOH CS = VIH, OE = VIH, f = 5MHz IOL = 2.1mA, VCC = 4.5V IOH = -400µA, VCC = 4.5V
Operating Supply Current x 32 Mode ICC x 32 CS = VIL, OE = VIH, f = 5MHz
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
FIG. 3 AC TEST CIRCUIT
Parameter
AC TEST CONDITIONS
Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V Input Pulse Levels Input Rise and Fall Input and Output Reference Level
Output Timing Reference Level
Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
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White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
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