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Details, datasheet, quote on part number:WE512K16
 
 
Part:WE512K16
Category:Memory => ROM => EEPROM => EEPROM MCP
Description:Organization = 512Kx16 ;; Speed (ns) = 150-300 ;; Volt = 5 ;; Package = 68 CQFP ;; Temp = C,i,m ;;
Company:White Electronic Designs Corporation
Datasheet:Download WE512K16 datasheet   File size : 137 kB
Request For quote:  Find where to buy WE512K16
 



Datasheet text preview:
WE512K16-XG4X
HI-RELIABILITY PRODUCT
512Kx16 CMOS EEPROM MODULE
FEATURES
s Access Time of 140, 150, 200ns s Packaging: · 68 lead, 40mm Hermetic CQFP (Package 501) s Organized as 4 banks of 128Kx16 s Write Endurance 10,000 Cycles s Data Retention Ten Years Minimum s Military Temperature Range s Low Power CMOS s Automatic Page Write Operation s Page Write Cycle Time: 10ms Max s Data Polling for End of Write Detection s Hardware and Software Data Protection s TTL Compatible Inputs and Outputs s 5 Volt Power Supply s 8 Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight - 20 grams typical
FIG. 1
PIN CONFIGURATION TOP VIEW
NC A0 A1 A2 A3 A4 A5 CS 1 GND CS 3 WE A6 A7 A8 A9 A10 VCC
PIN DESCRIPTION
I/O0-15 Data Inputs/Outputs A0-16 Address Inputs Write Enable Chip Selects Output Enable Power Supply Ground Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
128K x 8
WE
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 NC NC INC NC NC NC NC NC GND NC NC NC NC NC NC NC NC
C S 1-4 OE VCC GND NC
BLOCK DIAGRAM
C S 1 C S 2 CS3 C S 4
A0-16 OE WE 128K x 8 128K x 8 128K x 8 128K x 8
VCC A11 A12 A13 A14 A15 A16 CS2 OE CS4 NC NC NC NC NC NC NC
128K x 8 128K x 8 128K x 8
I/O0-7
I/O8-15
NOTE: CS 1-4 are used as bank selects. During reads, only one CSx can be active at one time.
April 1999 Rev. 2
1
White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520
WE512K16-XG4X
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Voltage on OE and A9 Symbol TA T STG VG -55 to +125 -65 to +150 -0.6 to +6.25 -0.6 to +13.5 Unit °C °C V V CS H L L X X X OE X L H H X L
TRUTH TABLE
WE X H L X H X Mode Standby Read Write Out Disable Write Inhibit Data I/O High Z Data Out Data In High Z/Data Out
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
CAPACITANCE (TA = +25°C)
Parameter OE capacitance WE capacitance CS1-4 capacitance Data I/O capacitance Address input capacitance Symbol C OE CW E C CS CI / O C AD Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz Max 50 50 25 40 70 Unit pF pF pF pF pF
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol V CC VIH V IL TA Min 4.5 2.0 -0.3 -55 Max 5.5 Vcc + 0.3 +0.8 +125 Unit V V V °C
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Input Leakage Current Output Leakage Current Operating Supply Current (x16) Chip Erase Current Standby Current (CMOS) Output Low Voltage Symbol ILI ILO ICCx16 ICC1 ISB V OL Conditions VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS1 = VIL, OE = CS2-4 = VIH, f = 5MHz, VCC = 5.5 CS = VIL, OE = VIH, f = 5MHz, VCC = 5.5 CS = VIH, OE = VIH, f = 5MHz, VCC = 5.5 IOL = 2.1mA, VCC = 4.5V IOH = -400µA, VCC = 4.5V 2.4 Min Max 10 10 160 250 5 0.45 Unit µA µA mA mA mA V V
Output High Voltage V OH NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
FIG. 2
AC TEST CIRCUIT
Current Source I OL
AC TEST CONDITIONS
Parameter I n p u t Pulse Levels I n p u t Rise and Fall Input and Output Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V
D.U.T. C eff = 50 pf
VZ
1.5V
O u t p u t Timing Reference Level
(Bipolar Supply)
I OH Current Source
NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . V Z is typically the midpoint of VOH and VOL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520
2
WE512K16-XG4X
AC WRITE CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Write Cycle Parameter Write Cycle Time, TYP = 6ms Address Set-up Time Write Pulse Width (WE or CS) Chip Select Set-up Time Address Hold Time Data Hold Time Chip Select Hold Time Data Set-up Time Output Enable Set-up Time Output Enable Hold Time Write Pulse Width High Symbol t WC tAS t WP tCS tAH tDH tCSH tDS tOES tOEH tWPH 10 120 0 100 10 0 100 10 10 50 Min Max 10 Unit ms ns ns ns ns ns ns ns ns ns ns
WRITE
A write cycle is initiated when OE is high and a low pulse is on WE or CS with CS or WE low. The address is latched on the falling edge of CS or WE whichever occurs last. The data is latched by the rising edge of CS or WE, whichever occurs first. A word write operation will automatically continue to completion.
WRITE CYCLE TIMING
Figures 3 and 4 show the write cycle timing relationships. A write cycle begins with address application, write enable and chip select. Chip select is accomplished by placing the CS line low. Write enable consists of setting the WE line low. The write cycle begins when the last of either CS or WE goes low. The WE line transition from high to low also initiates an internal 150 µsec delay timer to permit page mode operation. Each subsequent WE transition from high to low that occurs before the completion of the 150 µsec time out will restart the timer from zero. The operation of the timer is the same as a retriggerable one-shot.
3
White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520