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Details, datasheet, quote on part number:WF1M32B-100HM3
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| Part: | WF1M32B-100HM3 |
| Category: | Memory => Flash => Flash MCP |
| Description: | Organization = 1Mx32 ;; Speed (ns) = 100-150 ;; Volt = 3.3 ;; Package = 68 CQFP ;; Temp = C,i,m ;; |
| Company: | White Electronic Designs Corporation |
| Datasheet: | Download WF1M32B-100HM3 datasheet File size : 164 kB |
| Request For quote: | Find where to buy WF1M32B-100HM3
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Datasheet text preview:
WF1M32B-XXX3
HI-RELIABILITY PRODUCT
1Mx32 3.3V FLASH MODULE
FEATURES
s Access Times of 100, 120, 150ns s Packaging · 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP (Package 401) · 68 lead, Low Profile CQFP (G2T), 4.6mm (0.180") square (Package 509) s 1,000,000 Erase/Program Cycles s Sector Architecture · One 16KByte, two 8KBytes, one 32KByte, and fifteen 64kBytes in byte mode · Any combination of sectors can be concurrently erased. Also supports full chip erase s Organized as 1Mx32 s Commercial, Industrial and Military Temperature Ranges s 3.3 Volt for Read and Write Operations
Note: For programming information refer to Flash Programming 8M3 Application Note.
s Boot Code Sector Architecture (Bottom) s Low Power CMOS, 1.0mA Standby s Embedded Erase and Program Algorithms s Built-in Decoupling Caps for Low Noise Operation s Erase Suspend/Resume · Supports reading data from or programing data to a sector not being erased s Low Current Consumption Typical values at 5MHz: · 40mA Active Read Current · 80mA Program/Erase Current s Weight WF1M32B-XG2TX3 -8 grams typical WF1M32B-XHX3 -13 grams typical
PIN CONFIGURATION FOR WF1M32B-XHX3 TOP VIEW
1 I/O8 I/O9 I/O10 A14 A16 A11 A0 A18 I/O0 I/O1 I/O2 11 22 12 RESET CS2 GND I/O11 A10 A9 A15 VCC CS1 A19 I/O3 33 23 I/O15 I/O14 I/O13 I/O12 OE A17 WE I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A7 A12 NC A13 A8 I/O16 I/O17 I/O18 44 34 VCC CS4 NC I/O27 A4 A5 A6 NC CS3 GND I/O19 55 45 I/O31 I/O30 I/O29 I/O28 A1 56
PIN DESCRIPTION
I / O0 - 3 1 A 0-19 WE CS 1-4 OE RESET VC C
A2 A3 I/O23 I/O22 I/O21 I/O20 66
1M x 8 1M x 8 1M x 8 1M x 8 RESET WE OE A0-19
Data Inputs/Outputs Address Inputs Write Enable Chip Selects Output Enable Reset Power Supply Ground Not Connected
GND NC
BLOCK DIAGRAM
CS 1 CS2 CS3 CS4
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
M a y 1999 Rev. 4
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White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520
WF1M32B-XXX3
PIN CONFIGURATION FOR WF1M32B-XG2TX3 TOP VIEW
RESE T A0 A1 A2 A3 A4 A5 CS 3 GND CS 4 WE 1 A6 A7 A8 A9 A10 VCC
PIN DESCRIPTION
I/O 0-31 A0-19 W E1 - 4
I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Reset/Powerdown Power Supply Ground
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
RESET OE A0-19
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
CS 1-4 OE
0.940"
RESET VC C GND
The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form.
BLOCK DIAGRAM
WE 1 CS 1 WE 2 CS 2 WE 3 CS 3 WE 4 CS 4
A17 WE 2 WE 3
WE 4
A11
A12
A13
A14
A15
A16
A18
A19
OE
VCC
CS1
CS2
NC
1M x 8
1M x 8
1M x 8
1M x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520
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WF1M32B-XXX3
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Supply Voltage Range (VCC) Signal Voltage Range Storage Temperature Range Lead Temperature (soldering, 10 seconds) Endurance (write/erase cycles) -55 to +125 -0.5 to +4.0 -0.5 to Vcc +0.5 -65 to +150 +300 1,000,000 min. Unit °C V V °C °C cycles Parameter OE capacitance WE1-4 capacitance CS1-4 capacitance Data I/O capacitance Address input capacitance
CAPACITANCE (TA = +25°C)
Symbol CO E CW E CC S C I/O CAD Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz Max 50 20 20 20 50 Unit pF pF pF pF pF
NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) Symbol V CC VIH V IL TA TA Min 3.0 0.7 x Vcc -0.5 -55 -40 Max 3.6 V C C + 0.3 +0.8 +125 +85 Unit V V V °C °C Parameter Minimum Pattern Data Retention Time
DATA RETENTION
Test Conditions 150°C 125°C Min 10 20 Unit Years Years
DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 3.3V, VSS = 0V, TA = -55°C to +125°C)
Parameter Input Leakage Current Output Leakage Current VCC Active Current for Read (1) VCC Active Current for Program or Erase (2) V C C Standby Current O u t p u t Low Voltage O u t p u t High Voltage L o w VCC Lock-Out Voltage (4) Symbol I LI I LOx32 ICC1 ICC2 I CC3 VOL V OH1 V LKO Conditions V C C = 3.6, VIN = GND or VCC V C C = 3.6, VIN = GND or VCC CS = VIL, OE = VIH, f = 5MHz CS = VIL, OE = VIH V C C = 3.6, CS = VIH, f = 5MHz I O L = 5.8 mA, VCC = 3.0 I O H = -2.0 mA, VCC = 3.0 0.85
X
Min
Max 10 10 120 140 200 0.45
Unit µA µA mA mA µA V V V
VCC 2.5
2.3
NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than 8 mA/MHz, with OE at VIH. 2. I CC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V 4. Guaranteed by design, but not tested.
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White Electronic Designs Corporation · Phoenix, AZ · (602) 437-1520
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