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Details, datasheet, quote on part number:WS128K32-20
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| Part: | WS128K32-20 |
| Category: | Memory => SRAM => MCPSRAM |
| Description: | Organization = 128Kx32 ;; Speed (ns) = 70-120 ;; Volt = 5 ;; Package = 68 CQFP ;; Temp = C,i,m,q ;; |
| Company: | White Electronic Designs Corporation |
| Datasheet: | Download WS128K32-20 datasheet File size : 405 kB |
| Request For quote: | Find where to buy WS128K32-20
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Datasheet text preview:
WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187
FEATURES
n Access Times of 70, 85, 100, 120ns n MIL-STD-883 Compliant Devices Available n Packaging 66-pin, PGA Type, 1.075 inch square, Hermetic Ceramic HIP (Package 400). 68 lead, 40mm Low Profile CQFP, 3.56mm (0.140")(Package 502). 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880 inch) square, 4.57mm (0.140 inch) high, (Package 510) 68 lead, Hermetic CQFP (G1U), 23.9mm (0.940 inch) square, 4.57mm (0.140inch) high, (Package 519) n Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 n Commercial, Industrial and Military Temperature Ranges n 5 Volt Power Supply n L o w Power CMOS n TTL Compatible Inputs and Outputs n Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation n Weight WS128K32-XG1U - 5 grams typical WS128K32-XG2UX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX - 20 grams typical n All devices are upgradeable to 512Kx32
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S R A M MODULES
FIG. 1
PIN CONFIGURATION FOR WS128K32N-XH1X TOP VIEW PIN DESCRIPTION
34 I/O15 I/O14 I/O13 I/O12 OE NC WE1 I/O7 I/O6 I/O5 I/O4 33 I/O24 I/O25 I/O26 A7 A12 NC A13 A8 I/O16 I/O17 I/O18 44 VCC CS4 WE4 I/O27 A4 A5 A6 WE3 CS3 GND I/O19 55 45 I/O31 I/O30 I/O29 I/O28 A1 A2 A3 I/O23 I/O22 I/O21 I/O20 66 56
1 I/O8 I/O9 I/O10 A14 A16 A11 A0 NC I/O0 I/O1 I/O2 11
12 WE2 CS2 GND I/O11 A10 A9 A15 VCC CS1 NC I/O3 22
23
I / O0 - 3 1 A0-16 WE1-4 CS1-4 OE VCC GND NC
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
BLOCK DIAGRAM
September 2001 Rev. 3
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS128K32-XXX
FIG. 2
PIN CONFIGURATION FOR WS128K32-XG4TX TOP VIEW PIN DESCRIPTION
I / O0 - 3 1 A0-16 WE CS1-4 OE VCC GND NC Data Inputs/Outputs Address Inputs Write Enable Chip Selects Output Enable Power Supply Ground Not Connected
BLOCK DIAGRAM
CS 1 CS 2 CS3 CS4
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S R A M MODULES
WE OE A0-16 128K x 8 128K x 8
128K x 8
128K x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
FIG. 3
PIN CONFIGURATION FOR WS128K32-XG1UX AND WS128K32-XG2UX TOP VIEW
PIN DESCRIPTION
I / O 0-31 A0-16 WE1-4 CS1-4 OE VCC GND NC Data Inputs/Outputs Address Inputs Write Enable Chip Selects Output Enable Power Supply Ground Not Connected
BLOCK DIAGRAM
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
2
WS128K32-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -55 -65 -0.5 Max +125 +150 Vcc+0.5 150 7.0 Unit °C °C V °C V CS H L L L OE X L H X WE X H H L
TRUTH TABLE
Mode St a n d b y Read O u t Disable Wr i t e Data I/O High Z D a t a Out High Z D a t a In Power St a n d b y Active Active Active
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 4.5 2.2 -0.5 Max 5.5 V C C + 0.3 +0.8 Unit V V V Parameter OE capacitance WE1-4 capacitance HIP (PGA) CQFP G4T CQFP G1U CQFP G2U CS1-4 capacitance Data I/O capacitance Address input capacitance
CAPACITANCE ( TA = +25°C)
Symbol C OE C WE Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz Max 50 20 50 20 15 20 20 50 Unit pF pF
CCS CI/O CAD
VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz
pF pF pF
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S R A M MODULES
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
I n p u t Leakage Current Output Leakage Current Operating Supply Current S t a n d b y Current Output Low Voltage Output High Voltage
Sym
ILI ILO ICC ISB VOL
Conditions
VCC = 5.5, VIN = GND to VCC
CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
Min
-70
Max
10 10 120 20 0.4
Min
-85
Max
10 10 120 20 0.4
Min
-100 Max
10 10 120 20 0.4
Min
-120
Max
10 10 120 20 0.4
Units
µA µA mA mA V V
IOL = 2.1mA, Vcc = 4.5 2.4
V O H IOH = -1.0mA, Vcc = 4.5
2.4
2.4
2.4
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS ( TA = -55°C to +125°C)
Parameter Data Retention Supply Voltage Data Retention Current Symbol Conditions -70 Min Max 2.0 5.5 4 -85 Min Max 2.0 5.5 4 -100 Min Max 2.0 5.5 4 -120 Min Max 2.0 5.5 4 Units
VDR I CCDR1
C S ³ V C C -0.2V V C C = 3V
V mA
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
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