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Details, datasheet, quote on part number:WS128K32-XG2TXE
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Datasheet text preview:
WS128K32-XG2TXE
HI-RELIABILITY PRODUCT
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLERANT
FEATURES
s Access Times of 35, 45, 55ns s Packaging · 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509) s Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 s Low Power Data Retention s Commercial, Industrial and Military Temperature Ranges s 5 Volt Power Supply s Low Power CMOS s TTL Compatible Inputs and Outputs
ADVANCED*
s Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation s Weight: WS128K32-XG2TXE - 8 grams typical s Radiation tolerant with epitaxial layer on die. s 6T memory cells provide excellent protection against soft errors
* This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice.
FIG. 1
PIN CONFIGURATION FOR WS128K32-XG2TXE TOP VIEW PIN DESCRIPTION
I/O0-31 A 0-16
I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31
NC A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 VCC
Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
W E2 WE3 WE4 V CC OE CS2 A11 A12 A13 A14 A15 A16 NC
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 NC CS1 NC NC
WE1-4 C S 1-4 OE VCC
0.940"
GND NC
The WEDC 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form.
OE A0-16
BLOCK DIAGRAM
WE1 CS 1 WE2 CS2 WE3 CS 3 WE 4CS4
128K x 8
128K x 8
128K x 8
128K x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
December 2000 Rev. 0
1
White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com
WS128K32-XG2TXE
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -55 -65 -0.5 Max +125 +150 Vcc+0.5 150 7.0 Unit °C °C V °C V CS H L L L OE X L X H X H L H
TRUTH TABLE
WE Mode Standby Read Write O u t Disable Data I/O High Z D a t a Out D a t a In High Z Power Standby Active Active Active
CAPACITANCE (TA = +25°C)
Parameter Symbol C OE CW E CC S CI / O CAD Conditions VIN = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz 20 VIN = 0 V, f = 1.0 MHz VI/O = 0 V, f = 1.0 MHz VIN = 0 V, f = 1.0 MHz 20 20 50 pF pF pF Max 50 Unit pF pF OE capacitance WE1-4 capacitance CQFP G2T CS1-4 capacitance Data I/O capacitance Address input capacitance
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC V IH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 V C C + 0.3 +0.8 +125 Unit V V V °C
This parameter is guaranteed by design but not tested.
RADIATION CHARACTERISTICS
Total Dose (TM1019.5) Functional Parametric
(Krads) (Krads)
Latch-up
25°C VCC Max
SEU LET Threshold
(VCC MIN) (M e V / m g / c m 2 )
Cross Section
/BIT (E-6 cm2)
Typical Iccsb (mA) (MeV/mg/cm2)
30
30
1.2
>100
2
0.2
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage Sym I LI ILO ICC ISB VO L V OH Conditions Min VCC = 5.5, VIN = GND to VCC CS = VIH, OE = VIH, VOUT = GND to VCC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4OmA, VCC = 4.5 2.4 Max 10 10 520 8 0.4 Units µA µA mA mA V V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C)
Characteristic Data Retention Voltage Data Retention Quiescent Current Chip Disable to Data Retention Time (1) Operation Recovery Time (1) NOTE: Parameter guaranteed, but not tested. Sym VC C ICCDR TCDR TR Conditions VCC = 2.0V CS VCC -0.2V VIN VCC -0.2V or VIN 0.2V Min 2 0 TRC Max 1 Units V mA ns ns
White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com
2
WS128K32-XG2TXE
AC CHARACTERISTICS (V CC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA t OH t ACS tOE t CLZ1 tOLZ1 tCHZ1 t O H Z1 3 0 20 12 0 35 15 3 0 20 15 Symbol -35 Min 35 35 0 45 20 3 0 20 20 Max -45 Min 45 45 0 55 30 Max Min 55 55 -55 Max ns ns ns ns ns ns ns ns ns Units
1 . This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write W r i t e Enable to Output in High Z Data Hold Time t WC t CW t AW t DW t WP tAS tAH tOW1 tWHZ1 tDH 0 Symbol Min 35 25 25 20 25 0 0 0 10 0 -35 Max 45 35 35 25 35 0 0 0 15 0 -45 Min Max Min 55 45 45 25 45 0 0 0 20 -55 Max ns ns ns ns ns ns ns ns ns ns Units
1 . This parameter is guaranteed by design but not tested.
FIG. 2
AC TEST CIRCUIT
Current Source I OL
AC TEST CONDITIONS
Parameter I n p u t Pulse Levels I n p u t Rise and Fall Input and Output Reference Level
D.U.T. VZ
Typ VIL = 0, VIH = 3.0 5 1.5 1.5
Unit V ns V V
1.5V
O u t p u t Timing Reference Level
C eff = 50 pf
(Bipolar Supply)
I OH Current Source
NOTES: VZ is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. T e s t e r Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. I OL & IOH are adjusted to simulate a typical resistive load circuit. A T E tester includes jig capacitance.
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White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com
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