Details, datasheet, quote on part number: 2SA1104
Part2SA1104
CategoryDiscrete
DescriptionSilicon Epitaxial Planar Transistor ( General Description )
CompanyWing Shing Electronic
DatasheetDownload 2SA1104 datasheet
Cross ref.Similar parts: 2SA1103, 2SA110, 2SA1105, 2SA1106, 2SA118, 2SB69, 2SB688
Quote
Find where to buy
 
  

 

Features, Applications

Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose

PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time

PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature

PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency = 5MHz Collector capacitance 1MHz On times Tum-off storage time Fall time

Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com

 

Some Part number from the same manufacture Wing Shing Electronic
2SA1105 PNP Planar Silicon Transistor ( Audio Power Amplifier DC to DC Converter )
2SA1106 PNP Planar Transistor ( Audio Power Amplifier, DC to DC Converter )
2SA1186 Description = Audio Power Amplifier DC to DC Converter ;; Package = SC-65
2SA1215 Description = Audio Power Amplifier DC to DC Converter ;; Package = MT-200
2SA1216
2SA1301 PNP Planar Silicon Transistor ( Audio Power Amplifier DC to DC Converter )
2SA1302 Description = Audio Power Amplifier DC to DC Converter ;; Package = 2-21F1A
2SA1307 PNP Epitaxial Silicon Transistor ( Power Amplifier Vertical Deflection Output )
2SA1490 PNP Planar Silicon Transistor ( Audio Power Amplifier DC to DC Converter )
2SA1491
2SA1492 Description = Audio Power Amplifier DC to DC Converter ;; Package = SC-65
2SA1939
2SA473 PNP Epitaxial Silicon Transistor ( Low Frequency Power Amplifier )
2SA671 Description = Low Frequency Power Amplifier ;; Package = TO-220
2SA769 PNP Epitaxial Silicon Transistor ( Low Frequency Power Amplifier )
2SA940 Description = Power Amplifier Vertical Deflection Output ;; Package = TO-220
2SA968 Description = Low Frequency Power Amplifier ;; Package = TO-220
2SA985 PNP Epitaxial Silicon Transistor ( Low Frequency Power Amplifier )
2SA986A
2SB1016 PNP Epitaxial Silicon Transistor ( Power Amplifier Vertical Deflection Output )
2SB1033 PNP Epitaxial Silicon Transistor ( Low Frequency Power Amplifier )

2SA1106 : PNP Planar Transistor ( Audio Power Amplifier, DC to DC Converter )

FR101 : Description = Fast Recovery Rectifier ;; Package = DO-41

HC-49/U : Description = Crystal Unit ;; Package =

KBPC2510 : Description = Single-phase Silicon Bridge Rectifier ;; Package = MB-25

P600B6A1 : Silicon Rectifier ( Voltage Range - 50 to 1000 Volts Current - 6.0 Amperes )

P600G6A4 : Silicon Rectifier ( Voltage Range - 50 to 1000 Volts Current - 6.0 Amperes )

TIP42A : Description = Medium Power Linear Switching Application ;; Package = TO-220

TL062C : Description = Lower Power J-FET Dual Operational Amplifier ;; Package = so 8

WS628512LLST-70 : Very Low Power/voltage CMOS SRAM 512k X 8 Bit

79L08 : Negative-voltage Regulators

Same catergory

EGP20 : IF(A) = 2 ;; Ifsm (A) = 75 ;; VRRM (V) = 50 600. 2 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 C. 3. Max. soldering time, 3.5 sec. 4. Do not bend lead at a point closer than 2 mm. to the body. Glass Passivated Junction High current capability The plastic material carries U/L recognition.

FDC6331L : Integrated Load Switch. General This device is particularly suited for compact power management in portable electronic equipment where to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package. Applications Load switch Power management.

FS10UM-14A : N-channel Power MOSFET High-speed Switching Use: 700v, 10a. APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th).

LPA6836V : Medium Power Phemt. MEDIUM POWER PHEMT WITH SOURCE VIAS 25 dBm Output Power at 1-dB Compression at 18 GHz 9.5 dB Power Gain at 18 GHz 55% Power-Added Efficiency Source Vias to Backside Metallization DIE SIZE: 15.4X14.2 mils (390x360 m) DIE THICKNESS: 3.9 mils (100 m) BONDING PADS: 3.0X3.0 mils (75x75 m) The is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs).

TIM5053-35SL : GaAs. Microwave Power GAAS Fet.

TS100RS : Fast Switching Plastic Diodes.

05002330AFMB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

ATC700C : CAPACITOR, CERAMIC, MULTILAYER, 300 - 2500 V, SURFACE MOUNT. s: Configuration / Form Factor: Leaded Capacitor, Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

B2136T : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

BC461-4E1 : 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: PNP ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

CR05AS-4AB : SCR. s: Thyristor Type: SCR ; Package Type: SOT-89, 3 PIN ; Pin Count: 3.

EPIMSC0402C-10NG : 1 ELEMENT, 0.01 uH, ALUMINA-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: ALUMINA ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Inductance Tolerance: 2 (+/- %) ; DCR: 0.2000.

F5000S : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

FR2AT/R13 : 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA. s: Package: SMB, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 2000 mA ; trr: 0.0150 ns ; RoHS Compliant: RoHS.

GRJ31CR72E104KWJ3L : CAPACITOR, CERAMIC, MULTILAYER, 250 V, X7R, 0.1 uF, SURFACE MOUNT, 1206. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 250 volts ; Mounting Style: Surface Mount Technology.

IRFE9120-JQR-B : 3.5 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.6900 ohms ; Package Type: HERMETIC SEALED, LCC4-18 ; Number of units in IC: 1.

KP2310RTL-G : 40 V, SILICON, PIN DIODE. s: Diode Type: PIN ; VBR: 40 volts ; Package: LEAD FREE PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

SL6U5031S14 : RESISTOR, POTENTIOMETER, 50000 ohm. s: Potentiometer Type: Standard Potentiometer ; Resistance Taper: Linear ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 50000 ohms ; Tolerance: 10 +/- %.

106SML016MD3 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 1.6 microamps ; ESR: 31500 milliohms ; Mounting Style: Surface Mount Technology ; Operating.

934034860118 : 27.5 W, UNIDIRECTIONAL, 18 ELEMENT, SILICON, TVS DIODE, MS-013AC. s: Arrangement: Common Anode ; Diode Type: Transient Voltage Suppressor Diodes ; RoHS Compliant: RoHS ; Package: PLASTIC, SO-20 ; Pin Count: 20 ; Number of Diodes: 18.

 
0-C     D-L     M-R     S-Z