Details, datasheet, quote on part number: KBL400
PartKBL400
CategoryDiscrete => Bridges => Bridge Rectifiers
Description
CompanyWon Top Electronics
DatasheetDownload KBL400 datasheet
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KBL401
KBL402
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1N4148W/S : Small Signal. Small-signal Diodes. Silicon Epitaxial Planar Diode Fast switching diodes These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148. Case: = SOD-123 Plastic Case = SOD-323 Plastic Case Weight: 1N4148W = approx.

1N4256 : High Voltage Rectifiers.

AT726 : . Via N. Lorenzi I 16152 GENOVA - ITALY Tel. int. Fax Int. Tx 270318 ANSUSE I - Repetitive voltage up to Mean on-state current Surge current 38 kA Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM Mean on-state current Mean.

BC303 : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 60V ;; IC(cont) = 1A ;; HFE(min) = 40 ;; HFE(max) = 240 ;; @ Vce/ic = 10V / 150mA ;; FT = 75MHz ;; PD = 0.85W.

FFA15U120DN : 15A/1200V Ultra Fast Recovery Rectifier. High voltage and high reliability High speed switching Low forward voltage Applications General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits TO-3P Symbol VRRM IF(AV) IFSM TJ, TSTG (per diode) TC=25C unless otherwise noted Value to +150 Units A C Parameter Peak Repetitive Reverse Voltage Average.

FRK9150D : 26a, -100v, 0.125 Ohm, Rad Hard, P-channel Power MOSFETs. 26A, -100V, RDS(on) = 0.125 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma Meets Pre-Rad s to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD.

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SA48CA : 500 Watt Transient Voltage Suppressors. Glass passivated junction. 500W Peak Pulse Power capability on Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. Typical IR less than 1.0 A above 10V. COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO COLOR BAND.

PDTC143XMB : NPN Resistor-equipped Transistor; R1 = 4.7 K?, R2 = 10 K? NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143XMB.

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0603HC-100EGTS : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Inductance Tolerance: 2 (+/- %) ; DCR: 0.0580 ohms ; Rated DC Current: 800 milliamps.

A2-3R3K : 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Axial, WIRE ; Application: General Purpose, RF Choke ; Inductance Range: 3.3 microH ; Inductance Tolerance: 10 (+/- %) ; DCR: 0.8500 ohms ; Rated DC Current: 270 milliamps ; Q Factor: 45 ; SRF: 90 MHz ; Testing Frequency: 7900 kHz ; Operating Temperature: -55 to 125 C (-67.

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