Details, datasheet, quote on part number: MR756-T3
Description6.0A Standard Diode
CompanyWon Top Electronics
DatasheetDownload MR756-T3 datasheet


Features, Applications


Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A

Case: P-600, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 2.1 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add "-LF" Suffix to Part Number, See Page 4 D

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 60C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 6.0A @TA = 25C @TA = 100C

Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 1) Operating Temperature Range Storage Temperature Range

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

TA , AMBIENT TEMPERATURE (C) Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2, Typical Forward Characteristics
1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current 100
1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100

Note: 1. Paper reel, white or gray color. Core material: plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E.


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