Details, datasheet, quote on part number: MA5104
PartMA5104
Category
Description
CompanyZarlink Semiconductor
DatasheetDownload MA5104 datasheet
  

 

Features, Applications
THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS

The MA5104 4k Static RAM is configured x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3m technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state. Operation Mode Read Write Standby L X I/O D OUT D IN High Z ISB2 Power ISB1

FEATURES

s 3m CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 10A Typical to +125C Operation s All Inputs and Outputs Fully TTL or CMOS Compatible s Fully Static Operation

Symbol VCC TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. Max. 125 150 Units V C Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maxlmum rating conditions for extended perlods may affect device reliability.

Notes for Tables 4 and 5: 1. Characteristics apply to pre radiation to +125C with VDD 5V 10% and to post 100k Rad(Si) total dose radiation = 25C with VDD 5V 10% (characteristics at higher radiation levels available on request). 2. Worst case = +125C, guaranteed but not tested = -55C. GROUP A SUBGROUPS 2, 3. Symbol VDD VlH VlL VOH VOL ILI ILO IPUI IPDI IDD ISB1 ISB2 Parameter Supply voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current (note 2) Output Leakage Current (note 2) Input Pull-Up Current Input Leakage Current Power Supply Current Selected Supply Current Standby Supply Current Conditions = -1mA IOL = 2mA All inputs except CS Output disabled, VOUT = VSS or VDD VIN = VSS on CS input only VIN = VSS on CS input only fRC = 50% mark:space CS = VSS Chip disabled Min. 4.5 VDD/2 VSS 2.4 Typ. Max. 5.5 VDD Units mA A

Parameter VCC for Data Retention Data Retention Current

 

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