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Part: BCW67A
Category:
Description:
Company: Zetex Inc.
Datasheet: Download BCW67A datasheet File size : 265 kB
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Datasheet text preview:
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996 PARTMARKING DETAILS BCW67A DA BCW67B DB BCW67C DC BCW68F DF BCW68G DG BCW68H DH COMPLEMENTARY TYPES BCW67 BCW65 BCW68 BCW66 BCW67AR BCW67BR BCW67CR BCW68FR BCW68GR BCW68HR 4W 5W 6W 7T 5T 7N
BCW67 BCW68
C B E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current(10ms) Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCES VCEO VEBO ICM IC IB Ptot Tj:Tstg BCW67 -45 -32 -5 -1000 -800 -100 330 -55 to +150 BCW68 -60 -45 UNIT V V V mA mA mA mW °C
3 - 29
E
BCW67 BCW68
LECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Emitter Breakdown Voltage BCW67 BCW68 BCW67 BCW68 Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current BCW67 BCW68 Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer BCW67A BCW68F BCW67B BCW68G BCW67C BCW68H Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure IEBO VCE(sat) VBE(sat) hFE 75 100 35 120 160 60 180 250 100 100 12 18 80 2 10 170 -0.7 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CEO V(BR)CES V(BR)EBO ICES -32 -45 -45 -60 -5 -20 -10 -20 -10 -20 -0.3 -2 250 V
µA µA
V
ICEO=-10mA ICEO=-10mA IC=-10µA IC=-10µA IEBO =-10µA VCES =-32V = VCES=-32V ,Tamb 150°C VCES =-45V VCES=-45V , Tamb 150°C = VEBO =-4V IC=-100mA, IB = -10mA IC= -500mA, IB =-50mA* IC=-500mA, IB=-50mA* IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V* IC=-10mA, VCE =-1V IC=-100mA, VCE =-1V* IC=-500mA, VCE =-2V*
nA
nA nA
V V V
hFE
250
400
hFE
350
630 MHz pF pF dB
fT Ccbo Cebo N
IC =-20mA, VCE =-10V f = 100MHz VCBO =-10V, f =1MHz VEBO=-0.5V, f =1MHz IC= -0.2mA, VCE =- 5V RG =1K, f=1KH f=200Hz IC=-150mA IB1=- IB2 =-15mA RL=150
Switching times: Turn-On Time Turn-Off Time
ton toff
100 400
ns ns
Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% 3 - 30
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