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Details, datasheet, quote on part number:FZT1047A
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Datasheet text preview:
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 44m at 5A
FZT1047A
C
E C B SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER C o l l e c t o r - B a s e Voltage C o l l e c t o r - E m i t t e r Voltage E m i t t e r - B a s e Voltage P e a k Pulse Current C o n t i n u o u s Collector Current B a s e Current P o w e r Dissipation at T a m b= 2 5 ° C O p e r a t i n g and Storage Temperature Ran ge SYMBOL VCB O VCEO VEBO ICM IC IB Ptot T j: T s t g VALUE 35 10 5 20 5 500 2.5 -55 to +150 UNIT V V V A A mA W °C
FZT1047A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
VALUE
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
SYMBOL MIN. V(BR)CBO VCES VCEO VCEV 35 35 10 35 5 TYP. 65 55 16 60 8.9 0.3 0.3 0.3 25 50 140 220 925 890 280 290 300 200 60 430 440 450 330 110 150 85 130 230 110 10 10 10 40 70 200 350 1000 975 MAX.
UNIT V V V V V nA nA nA mV mV mV mV mV mV
CONDITIONS. IC=100µA IC=100µA IC=10mA IC=100µA, VEB=1V IE=100µA VCB=20V VEB=4V VCES=20V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=3A, IB=15mA* IC=5A, IB=25mA* IC=5A, IB=25mA* IC=5A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=20A, VCE=2V*
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICBO IEBO ICES VCE(sat)
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
1200
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
MHz pF ns ns
IC=50mA, VCE=10V f=50MHz VCB=10V, f=1MHz IC=4A, IB=40mA, VCC=10V IC=4A, IB=±40mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
FZT1047A
TYPICAL CHARACTERISTICS
1
+25°C IC/IB=100
0.6 0.8
VCE(sat) - (V)
0.6 0.4 0.2 0 1m 10m 100m 1 10 100
IC/IB=200 IC/IB=100 IC/IB=50
VCE(sat) - (V)
0.4
+150°C +50°C +25°C -55°C
0.2
0 1m
IC - Collector Current (A) VCE(sat) v IC
10m IC -
100m
1
10
100
Collector Current (A) VCE(sat) v IC
600
VCE=2V +100°C +25°C -55°C
1.2 1
IC/IB=100
hFE - Typical Gain
500 400 300 200 100 0 1m 10m IC 100m 1 10
VBE(sat) - (V)
0.8 0.6 0.4 0.2 0
-55°C +25°C +100°C +150°C
100
1m
10m
100m
1
10
100
Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
1.5 1.2
100
IC - Collector Current (A)
VCE=2V
VBE(on) - (V)
10
DC 1s 100ms 10ms 1ms 100us
0.9 0.6 0.3 0
-55°C +25°C +100°C +150°C
1
1m
10m
100m
1
10
100
100m 100m
1
10
100
IC - Collector Current (A) VBE(on) v IC
VCE - Collector Emitter Voltage (V)
Safe Operating Area
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